Ecole Polytechnique Federale De Lausanne

Ecole Polytechnique Féderale De Lausanne (Epfl)

Gizem Nogay

Christophe Ballif

Andrea Ingenito

Philipp Löper

Philipp LÖPER

The present invention relates to a solar cell comprising a heterojunction photoelectric device comprising, a front electrode layer, a back electrode layer comprising a metallic contact layer, a light-absorbing silicon layer arranged between said front electrode and said back electrode layers and a doped silicon-based layer arranged between said light-absorbing silicon layer and said back electrode layer, characterized in that said heterojunction photoelectric device further comprises a wide band gap material layer having an electronic band gap greater than 1.4 eV, said wide band gap material layer being applied on a surface of the light-absorbing silicon layer between said light-absorbing silicon layer and said doped silicon-based layer. The present heterojunction layer or stack of layers is compatible with thermal annealing and firing processes at T above 600&#xb0; C.

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Neuchâtel, Switzerland

Gizem Nogay