Samsung Electronics Co., Ltd.

Giyoung Yang

Sanghoon Baek

Taejoong Song

Jung-Ho Do

Jinyoung Lim

Ingyum Kim

Seungyoung Lee

Sungwe Cho

Jae-Ho Park

Jaewoo Seo

Hyosig Won

Hakchul Jung

Minji Kim

Jintae Kim

Jonghoon Jung

Sang-Kyu Oh

Byounggon Kang

Dalhee Lee

Myoung-ho Kang

Taejung Seol

Jaebeom Yang

A semiconductor device includes a substrate having an active region, first standard cells arranged in a first row on the active region, second standard cells arranged in a second row on the active region and having a first boundary with the first standard cells, a third standard cells arranged in a third row on the active region and having a second boundary with the first standard cells, and a plurality of power supply lines, respectively arranged along boundaries. Each of the first to third standard cells includes a plurality of fin patterns extending in the first direction, and the plurality of fin patterns are arranged in a second direction, so as not to be disposed on at least one boundary, among the first and second boundaries.

Semiconductor device and method of manufacturing the same

An integrated circuit includes a standard cell including a first active region extending in a first direction and having a first width, and a filler cell including a second active region of a same type as that of the first active region and being adjacent to the standard cell in the first direction, the second active region extending in the first direction and having a second width which is greater than the first width, wherein the standard cell further includes a first tapering portion of the same type as that of the first active region, the first tapering portion being arranged between the first active region and the second active region.

Integrated circuit including standard cell and filler cell

A flip-flop circuit may include a selection circuit, a master latch circuit and a slave latch circuit. The selection circuit includes a multiplexer and first and second inverters. The multiplexer outputs a data signal or a scan input signal to a first node in response to an enable signal. The first inverter is connected to the first node and provides an inversion of a signal of the first node to a second node in response to a clock signal. The second inverter is connected to the second node and provides an inversion of the signal of the second node to a third node in response to the clock signal and a signal of a fourth node. The master latch circuit is connected between the third and fourth nodes. The slave latch circuit is connected between the fourth node and an output terminal of the flip-flop circuit.

Flip-flops and scan chain circuits including the same

A method of designing a semiconductor device includes preparing a standard cell layout including a layout out a preliminary pin pattern in at least one interconnection layout, performing a routing step to connect the preliminary pin pattern to a high-level interconnection layout, and generating a pin pattern in the interconnection layout, based on hitting information obtained at the completion of the routing step. The pin pattern is smaller than the preliminary pin pattern.

Methods of designing a layout of a semiconductor device including field effect transistor and methods of manufacturing a semiconductor device using the same

A semiconductor device including: a conductor disposed on a substrate; a first contact disposed on the conductor; a second contact having a first portion disposed on the first contact and a second portion protruded away from the first portion in a direction parallel to the substrate, wherein the first and second contacts are disposed in an insulating layer; a via disposed on the insulating layer and the second portion of the second contact; and a metal line disposed on the via.

Semiconductor device including a gate electrode and a conductive structure

A semiconductor device includes a substrate that includes active patterns extending in a second direction, a third device isolation layer disposed on an upper portion of the substrate that includes a PMOSFET region and an NMOSFET region, and a gate electrode that extends across the active patterns in a first direction that crosses the second direction. The active patterns extend across the PMOSFET region and the NMOSFET region. The third device isolation layer lies between the PMOSFET region and the NMOSFET region. The third device isolation layer comprises a first part that extends in the second direction and a second part that extends in a third direction that crosses the first and second directions. The second part has opposite sidewalls parallel to the third direction, in a plan view.

Semiconductor device

Methods of designing a layout of a semiconductor device including field effect transistor and methods of manufacturing a semicondutor device using the same

A method of generating a photo mask for use during fabrication of a semiconductor device includes; generating an initial layout design including critical circuit paths and non-critical circuit paths by shielding all gate line patterns used to implement transistors in the critical circuits and non-critical circuits, and thereafter generating a layout design from the initial layout design by selectively un-shielding a non-critical gate line pattern among the gate line patterns used to implement a gate of a non-critical transistor in a non-critical circuit, while retaining the shielding of all critical gate line patterns among the gate line patterns.

Integrated circuit layout design system and method

A system-on-chip device may include a substrate with an active pattern, a gate electrode crossing the active pattern and extending in a first direction, and a first metal layer electrically connected to the active pattern and the gate electrode. The first metal layer may include a first metal line extending in the first direction and a second metal line spaced apart from the first metal line in the first direction to extend in a second direction crossing the first direction. The first and second metal lines may include first and second sidewalls parallel to the second direction, the first and second sidewalls may face each other, and the first sidewall may have a length that is two or three times a minimum line width.

System-on-chip devices and methods of designing a layout therefor

A semiconductor device includes a substrate having an active region, a gate structure intersecting the active region and extending in a first direction parallel to a top surface of the substrate, a first source/drain region and a second source/drain region disposed in the active region at both sides of the gate structure, respectively, and a first modified contact and a second modified contact in contact with the first source/drain region and the second source/drain region, respectively. The distance between the gate structure and the first modified contact is smaller than the distance between the gate structure and the second modified contact.

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Seoul, South Korea

Giyoung Yang