Samsung Electronics Co., Ltd.

Giyoung Jo

Chan Kwak

Taewon Jeong

Hyeon Cheol Park

Doh Won Jung

Daejin Yang

Euncheol Do

Hyungjun Kim

Changsoo Lee

Hyeoncheol Park

Takayoshi Sasaki

Yasuo Ebina

Dohwon Jung

Takaaki Taniguchi

A ternary paraelectric having a Cc structure and a method of manufacturing the same are provided. The ternary paraelectric having a Cc structure includes a material having a chemical formula of ABOthat has a monoclinic system, is a space group No. 9, and has a dielectric constant of 150 to 250, wherein 'A' is a Group 1 element, and “B” is a Group 5 element. “A” may include one of Na, K, Li and Rb. “B” may include one of Nb, V, and Ta. The ABOmaterial may be NaNbOin which bandgap energy thereof is greater than that of STO. The ABOmaterial may have relative density that is greater than 90% or more.

Ternary paraelectric material with space group Cc and method of manufacturing the same

Provided are a dielectric, a device including the same, and a method of preparing the dielectric. The dielectric material includes a NaNbOternary material including a perovskite phase with a Sm element substituted into a Na site such that the NaNbOternary material has a permittivity of 600 or more at 1 kHz, and a temperature coefficient of capacitance (TCC) of about −15% to about 15% in a range of about −55° C. to about +200° C.

Dielectric material, device including the same, and method of preparing the dielectric material

Provided are a dielectric material, a device including the dielectric material, and a method of preparing the dielectric material, in which the dielectric material may include: a layered perovskite compound, wherein the layered perovskite compound may include at least one selected from a Dion-Jacobson phase, an Aurivillius phase, and a Ruddlesden-Popper phase, a temperature coefficient of capacitance (TCC) of a capacitance at 200° C. with respect to a capacitance at 40° C. may be in a range of about −15 percent (%) to about 15%, and a permittivity of the dielectric material may be 200 or greater in a range of about 1 kilohertz (kHz) to about 1 megahertz (MHz).

Dielectric material, device comprising dielectric material, and method of preparing dielectric material

A sintering jig according to the disclosure includes a first plate including a plurality of protrusions and a second plate stacked on the first plate and including through holes corresponding to the protrusions. The through hole includes a cylindrical portion through which the protrusion enter and exit and a conical portion widening towards an upper surface of the second plate from the cylindrical portion.

Sintering jig

Provided are a dielectric material including a compound represented by Formula 1, a device including the same, and a method of preparing the dielectric material:(1&#x2212;)KNaNbOM(ASb)O&#x2003;&#x2003;[Formula 1]

Dielectric material, method of preparing the same, and device comprising the same

A relaxor-ferroelectric material, a method of synthesizing the same and a device including the relaxor-ferroelectric material are provided. The relaxor-ferroelectric material includes a ferroelectric material having a first polarization characteristic. The ferroelectric material having the first polarization characteristics includes a plurality of regions having a second polarization characteristic and spaced apart from each other, and the first polarization characteristic and the second polarization characteristic are different from each other. The ferroelectric material having the first polarization characteristics and the plurality of regions have different response characteristics with respect to alternating current (AC) sweeping. The plurality of regions may include a solid solution.

Relaxor-ferroelectric material and method of synthesizing the same and device including relaxor-ferroelectric material

Provided are a dielectric material including a composite represented by Formula 1, a device including the same, and a method of preparing the dielectric material:AB.(1&#x2212;)(BiNa)TiO&#x2003;&#x2003;[Formula 1]

Dielectric material, method of preparing the same, and device comprising the dielectric material

Provided are a dielectric including an oxide represented by Formula 1 below and having a cubic crystal structure, a capacitor including the dielectric, a semiconductor device including the dielectric, and a method of manufacturing the dielectric.(RbA)(BTa)O&#x2003;&#x2003;&#x3c;Formula 1&#x3e; In Formula 1 above, A is K, Na, Li, Cs, or a combination thereof, B is Nb, V, or a combination thereof, and 0.1&#x2264;x&#x2264;0.2, 0&#x2264;y&#x2264;0.2, and 0&#x2264;&#x3b4;&#x2264;0.5 are satisfied.

Dielectric, capacitor including dielectric, semiconductor device including dielectric, and method of manufacturing dielectric

Provided are a dielectric, a capacitor and a semiconductor device that include the dielectric, and a method of preparing the dielectric, the dielectric including: a composition represented by Formula 1; and an oxide including a perovskite type crystal structure having a polar space group or a non-polar space group other than a Pbnm space group:ABO&#x2003;&#x2003;&#x3c;Formula 1&#x3e;

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Suwon-si, South Korea

Giyoung Jo