Stmicroelectronics S.r.l.

Giuseppina Valvo

Davide Giuseppe Patti

Piero Fallica

Delfo Nunziato Sanfilippo

DelfoNunziato Sanfilippo

Alberto Fazzi

Alfio Russo

Stefano Agosteo

Piero Giorgio Fallica

In various embodiments, the present disclosure provides capacitors and methods of forming capacitors. In one embodiment, a capacitor includes a substrate, a first electrode on the substrate, a second electrode, and a first dielectric layer. A portion of the first electrode is exposed in a contact region. The first dielectric layer includes a first dielectric region between the first electrode and the second electrode, and a second dielectric region between the first dielectric region and the contact region. The second dielectric region is contiguous to the first dielectric region, and a surface of the second dielectric region defines a surface path between the first electrode and the contact region. The second dielectric region has a plurality of grooves that increase a spatial extension of said surface path.

High-voltage capacitor, system including the capacitor and method for manufacturing the capacitor

A photodetector including: a photodiode having a body made of semiconductor material delimited by a first surface, the body forming a first electrode region; a dielectric region, set on top of the first surface and delimited by a second surface; at least one channel extending within the dielectric region, starting from the second surface; and a first metallization, which is set on top of the second surface and is in electrical contact with the first electrode region.

Photodetector with integrated microfluidic channel and manufacturing process thereof

A radiation detector of the &#x394;E-E type is proposed. The detector is integrated in a chip of semiconductor material with a front surface and a back surface opposite the front surface, the detector having at least one detection cell arranged on the front surface for receiving a radiation to be evaluated, wherein the detector includes: a first region of a first type of conductivity extending into the chip from the front surface to a first depth; a second region of a second type of conductivity extending into the chip from the back surface to a second depth so as to reach the first region; and for each detection cell a third region of the second type of conductivity extending into the first region from the front surface to a third depth lower than the first depth and the second depth, a thin sensitive volume for absorbing energy from the radiation being defined by a junction between the first region and each third region, and a thick sensitive volume for absorbing further energy from the radiation being defined by a further junction between the first region and the second region. For each detection cell the detector further includes insulation means arranged around the third region and extending from the front surface into the first region to an insulation depth comprised between the first depth and the third depth.

Radiation detector of the deltaE-E type with insulation trenches

A chip of semiconductor material includes a first layer with a first type of conductivity having a surface on the first major surface of the chip, a second layer with the first type of conductivity having a surface on the second major surface of the chip, and a third layer with the first type of conductivity having a resistivity lower than those of the first and second layers and disposed between the first layer and the second layer. A first region with a second, type of conductivity, extends from the first surface into the first layer, and a second region with the second type of conductivity, extends from the second major surface into the second layer. First, second and third electrical connections are provided for connection with the first region, the second region, and the third layer, respectively. To provide a position detector which does not require a large number of connections, the second electrical connection includes two electrodes arranged a predetermined distance apart on the surface of the second region.

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Catania, Italy

Giuseppina Valvo