Stmicroelectronics S.r.l.

Giuseppe Morale

Mario Giuseppe Saggio

Giuseppe Arena

Domenico Murabito

Domenico Repici

Carlo Magro

Tiziana Cuscani

Anna Borzi

Corrado Coccorese

Letterio Fiore

A method for manufacturing a semiconductor power device, comprising the steps of: forming a trench in a semiconductor body having a first type of conductivity; partially filling the trench with semiconductor material via epitaxial growth so as to obtain a first column having a second type of conductivity and having an internal cavity. The epitaxial growth includes simultaneously supplying a gas containing dopant ions of the second type of conductivity, hydrochloric acid HCl in gaseous form and dichlorosilane DCS in gaseous form, so that the ratio between the amount of HCl and the amount of DCS has a value of from 3.5 to 5.5.

Superjunction power device and manufacturing method

In an MIS structure a field plate electrode is incorporated below a buried gate electrode by using an insulating oxide layer, which is formed concurrently with the gate dielectric layer. In order to obtain superior dynamic behavior and enhanced dielectric strength the oxidation behavior of the field plate electrode is modified, for instance by incorporating a desired high concentration of arsenic.

Method and a structure for enhancing electrical insulation and dynamic performance of MIS structures comprising vertical field plates

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Catania, Italy

Giuseppe Morale