Stmicroelectronics S.r.l.

Rutgers, the State University of New Jersey

Universita′ Di Pisa

Giuseppe Barillaro

Marco Morelli

Fabrizio Fausto Renzo Toia

Marco Sambi

Davide Giuseppe Patti

Riccardo Depetro

Caterina Riva

Roberto Campedelli

Simone Dario Mariani

Stefano Losa

Marco Marchesi

Lucanos Marsilio Strambini

Alessandro Diligenti

Howon Lee

Emanuele Vignali

Riddish Morde

A microneedle assembly and a method of fabrication the assembly are provided. The microneedle assembly includes an array of microneedles attached to a base. Each of the microneedles comprise a tip, a needle shaft and a plurality of cantilevered barbs protruding outwardly from the needle shaft, where a plurality of the microneedles include two or more of the cantilevered barbs arranged in a series of concentric rings along the needle shaft of each of the plurality of microneedles. The microneedle assembly may be fabricated using a 3D printing technique, where one or more cantilevered layers are formed by exposing a photocurable liquid resin including monomer material to a light source to create initially horizontal, cantilevered barbs having a crosslinking gradient, and rinsing to remove an amount of un-crosslinked monomers from the cantilevered layers to induce curvature in the cantilevered barbs extending towards a direction of the lower crosslinking.

3D printed microneedle assemblies

A technique to make silicon oxide regions from porous silicon and related semiconductor structures is disclosed. The porous silicon is made in situ by anodizing P doped silicon regions. Thus, the shape and profile of the oxide regions may be controlled by controlling the shape and profile of the P doped silicon regions.

Semiconductor structure with partially embedded insulation region and related method

A light-emitting device may include a semiconductor body having a first conductivity type, with a front side and a back side. The light-emitting device may also include a porous-silicon region which extends in the semiconductor body at the front side, and a cathode region in direct lateral contact with the porous-silicon region. The light-emitting device may further include a barrier region of electrically insulating material, which extends in direct contact with the cathode region at the bottom side of the cathode region so that, in use, an electric current flows in the semiconductor body through lateral portions of the cathode region.

Porous-silicon light-emitting device and manufacturing method thereof

A technique to make silicon oxide regions from porous silicon and related semiconductor structures are disclosed. The porous silicon is made in situ by anodizing P doped silicon regions. Thus, the shape and profile of the oxide regions may be controlled by controlling the shape and profile of the P doped silicon regions.

Semiconductor structure with partially embedded insulation region

A process of forming integrated electronic device having a semiconductor body includes: forming a first electrode region having a first type of conductivity; forming a second electrode region having a second type of conductivity, which forms a junction with the first electrode region; and forming a nanostructured semiconductor region, which extends in one of the first and second electrode regions.

Electronic junction device with a reduced recovery time for applications subject to the current recirculation phenomenon and related manufacturing process

An integrated electronic device having a semiconductor body including: a first electrode region having a first type of conductivity; and a second electrode region having a second type of conductivity, which forms a junction with the first electrode region. The integrated electronic device further includes a nanostructured semiconductor region, which extends in one of the first and second electrode regions.

A process for manufacturing an interaction system of a microelectromechanical type for a storage medium, the interaction system provided with a supporting element and an interaction element carried by the supporting element, envisages the steps of: providing a wafer of semiconductor material having a substrate with a first type of conductivity and a top surface; forming a first interaction region having a second type of conductivity, opposite to the first type of conductivity, in a surface portion of the substrate in the proximity of the top surface; and carrying out an electrochemical etch of the substrate starting from the top surface, the etching being selective with respect to the second type of conductivity, so as to remove the surface portion of the substrate and separate the first interaction region from the substrate, thus forming the supporting element.

Process for manufacturing a microelectromechanical interaction system for a storage medium

A process for manufacturing an interaction system of a microelectromechanical type for a storage medium, the interaction system provided with a supporting element and an interaction element carried by the supporting element, envisages the steps of: providing a wafer of semiconductor material having a substrate with a first type of conductivity (P) and a top surface; forming a first interaction region having a second type of conductivity (N), opposite to the first type of conductivity (P), in a surface portion of the substrate in the proximity of the top surface; and carrying out an electrochemical etch of the substrate starting from the top surface, the etching being selective with respect to the second type of conductivity (N), so as to remove the surface portion of the substrate and separate the first interaction region from the substrate, thus forming the supporting element.

Growing community of inventors

Pisa, Italy

Giuseppe Barillaro