Stmicroelectronics S.r.l.

Safecertifiedstructure Tecnologia S.p.a.

Safecertifiedstructure Tecnologia S.r.l.

Giuditta Roselli

Anna Angela Pomarico

Daniele Caltabiano

Fabio Pasolini

Michele Tronconi

Mohammad Abbasi Gavarti

Francesco Braghin

Andrea Picco

Bruno Murari

Roberto Brioschi

Pasquale Flora

Giuseppe Mancini

Annarita Morea

Alessandro Mariani

Anna Pomarico

A device includes: a micromechanical sensing structure configured to provide an electrical detection quantity as a function of a load; and a package enclosing the micromechanical sensing structure and providing a mechanical and electrical interface with respect to an external environment. The package includes a housing structure defining a cavity housing the micromechanical sensing structure; and a package coating that coats, at least in part, the housing structure, the package coating including a mechanical interface configured to transfer, in a uniform manner, the load on the housing structure and on the micromechanical sensing structure, wherein the housing structure includes a deformable layer interposed and in contact between the micromechanical sensing structure and the package coating, and wherein the deformable layer defines a mechanical-coupling interface.

High-range semiconductor load sensor device

Displacement transducer device, adapted to be coupled to reference points of a structure, includes a first element integrally securable to a first reference point of the structure, first and second magnets arranged so as to magnetically repel one another, a transducer arranged proximate the first and second magnets so as to detect a variation in the magnetic field between the first and second magnet and to convert the variation into a signal processed by a processing unit, the displacement transducer device includes a second element integrally securable to a second reference point of the structure, and one of the first or second magnet or transducer being connected to the first element and the remaining elements of the first or second magnet or transducer being connected to the second element such that a relative movement of the first or the second reference point causes a variation in the magnetic field.

Displacement transducer device

A microelectromechanical force/pressure sensor has: a sensor die, of semiconductor material, having a front surface and a bottom surface, extending in a horizontal plane, and made of a compact bulk region having a thickness along a vertical direction, transverse to the horizontal plane; piezoresistive elements, integrated in the bulk region of the sensor die, at the front surface thereof; and a cap die, coupled above the sensor die, covering the piezoresistive elements, having a respective front surface and bottom surface, opposite to each other along the vertical direction, the bottom surface facing the front surface of the sensor die. A conversion layer is arranged between the front surface of the sensor die and the bottom surface of the cap die, patterned to define a groove traversing its entire thickness along the vertical direction; the piezoresistive elements are arranged vertically in correspondence to the groove and the conversion layer is designed to convert a load applied to the front surface of the cap die and/or bottom surface of the sensor die along the vertical direction into a planar stress distribution at the groove, acting in the horizontal plane.

Microelectromechanical scalable bulk-type piezoresistive force/pressure sensor

A microelectromechanical transducer includes: a semiconductor body, having a first surface and a second surface opposite to one another; a first structural body, coupled to the first surface of the semiconductor body; a first sealed cavity between the semiconductor body and the first structural body; and an active area housed in the first sealed cavity, including at least two trenches and a sensor element between the trenches. The trenches extend along a vertical direction from the first surface towards the second surface of the semiconductor body.

Trench-based microelectromechanical transducer and method for manufacturing the microelectromechanical transducer

A sensor device for an electronic apparatus is provided with: a sensing structure generating a first detection signal; and a dedicated integrated circuit, connected to the sensing structure, detecting, as a function of the first detection signal, a first event associated to the electronic apparatus and generating a first interrupt signal upon detection of the first event. The dedicated integrated circuit detects the first event as a function of a temporal evolution of the first detection signal, and in particular as a function of values assumed by the first detection signal within one or more successive time windows, and of a relation between these values.

Sensor device provided with a circuit for detection of single or multiple events for generating corresponding interrupt signals

A sensor device for an electronic apparatus, including a sensing structure for generating a first detection signal, and a dedicated integrated circuit connected to the sensing structure for detecting a first event associated with the electronic apparatus and for generating a first interrupt signal upon detection of the first event. The dedicated integrated circuit detects the first event as a function of changes to the first detection signal over time (i.e., temporal evolution), and in particular as a function of values assumed by the first detection signal within one or more successive time windows, and of a relation between these values.

A sensor device for an electronic apparatus, including a sensing structure for generating a first detection signal, and a dedicated integrated circuit connected to the sensing structure for detecting a first event associated with the electronic apparatus and for generating a first interrupt signal upon detection of the first event. The dedicated integrated circuit detects the first event as a function of a temporal evolution of the first detection signal, and in particular as a function of values assumed by the first detection signal within one or more successive time windows, and of a relation between the values.

The present disclosure is directed to a MEMS resonant structure, provided with a substrate of semiconductor material; a mobile mass suspended above the substrate and anchored to the substrate by constraint elements to be free to oscillate at a resonance frequency; and a fixed-electrode structure capacitively coupled to the mobile mass to form a capacitor with a capacitance that varies as a function of the oscillation of the mobile mass; the fixed-electrode structure arranged on a top surface of the substrate, and the constraint elements being configured in such a way that the mobile mass oscillates, in use, in a vertical direction, transverse to the top surface of the substrate, keeping substantially parallel to the top surface.

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Lecce, Italy

Giuditta Roselli