S.o.i.tec Silicon on Insulator Technologies

Giséle Rayssac, Legal Representative

Olivier Rayssac

Pierre Rayssac, Legal Representative

Bruno Ghyselen

Fabrice Letertre

Carlos Mazure

Bruce Faure

Konstantin Bourdelle

Alice Boussagol

A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving support and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition.

Methods for making substrates and substrates formed therefrom

The invention provides methods of direct bonding substrates at least one of which includes a layer of semiconductor material that extends over its front face or in the proximity thereof. The provided methods include, prior to bonding, subjecting the bonding face of at least one substrate comprising a semiconductor material to selected heat treatment at a selected temperature and in a selected gaseous atmosphere. The bonded substrates are useful for electronic, optic, or optoelectronic applications.

Method for direct bonding two semiconductor substrates

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Clairvaux d'Aveyron, France

Giséle Rayssac, Legal Representative