Intel Corporation

Giselle Elbaz

Manish Chandhok

Florian Gstrein

Richard E Schenker

Rami Hourani

Eungnak Han

Tristan A Tronic

Nafees Kabir

Gurpreet Singh

Richard F Vreeland

Contact over active gate structures with metal oxide cap structures are described. In an example, an integrated circuit structure includes a plurality of gate structures above substrate, each of the gate structures including a gate insulating layer thereon. A plurality of conductive trench contact structures is alternating with the plurality of gate structures, each of the conductive trench contact structures including a metal oxide cap structure thereon. An interlayer dielectric material is over the plurality of gate structures and over the plurality of conductive trench contact structures. An opening is in the interlayer dielectric material and in a gate insulating layer of a corresponding one of the plurality of gate structures. A conductive via is in the opening, the conductive via in direct contact with the corresponding one of the plurality of gate structures, and the conductive via on a portion of one or more of the metal oxide cap structures.

Contact over active gate structures with metal oxide-caped contacts to inhibit shorting

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Portland, OR, United States of America

Giselle Elbaz