Carl Zeiss Smt Gmbh

Gisela Von Blanckenhagen

Dirk Heinrich Ehm

Stephan Muellender

Peter Huber

Joern Weber

Aurelian Dodoc

Aksel Goehnermeier

Christoph Zaczek

Frederik Bijkerk

Wilfried Clauss

Hans-Jochen Paul

Moritz Becker

Sascha Migura

Eric Louis

Irene Ament

Gerhard Braun

Roland Loercher

Qiushi Huang

Meint Jelle De Boer

A multilayer mirror for reflecting extreme ultraviolet (EUV) radiation, the mirror has a substrate and a stack of layers formed on the substrate. The stack of layers comprises layers including a low index material and a high index material, the low index material having a lower real part of the refractive index than the high index material at a given operating wavelength &#x3bb;. The mirror provides a first peak of reflectivity of 20% or more at a first wavelength &#x3bb;in a first wavelength band extending from 6 nm to 7 nm and a second peak of reflectivity of 20% or more at a second wavelength &#x3bb;in a second wavelength band extending from 12.5 nm to 15 nm.

Multilayer mirror

A reflective optical element, in particular for a microlithographic projection exposure apparatus has a substrate (), a reflection layer system () and a defect structure () of channel-shaped defects () which extend inward from the optical effective surface (), or from an interface oriented toward the substrate as far as the reflection layer system, and permit egress of hydrogen from the reflection layer system. The channel-shaped defects () increase a diffusion coefficient that is characteristic for the egress of the hydrogen from the reflection layer system () by at least 20%, in comparison to a similar layer construction without these channel-shaped defects.

Reflective optical element

In order to reduce the negative influence of reactive hydrogen on the lifetime of a reflective optical element, particularly inside an EUV lithography device, there is proposed for the extreme ultraviolet and soft X-ray wavelength region a reflective optical element () having a reflective surface () with a multilayer system () and in the case of which the reflective surface () has a protective layer system () with an uppermost layer () composed of silicon carbide or ruthenium, the protective layer system () having a thickness of between 5 nm and 25 nm.

Reflective optical element and optical system for EUV lithography

A method for producing a capping layer () composed of silicon oxide SiOon a coating () of a mirror (), the coating reflecting EUV radiation () e.g. for use in an EUV lithography apparatus or in an EUV mask metrology system. The method includes irradiating a capping layer () composed of silicon nitride SiNor composed of silicon oxynitride SiNOfor converting the silicon nitride SiNor the silicon oxynitride SiNOof the capping layer () into silicon oxide SiO. An associated mirror () includes a capping layer comprised of silicon oxide SiO, and can be provided in an associated EUV lithography apparatus.

Method for producing a capping layer composed of silicon oxide on an EUV mirror, EUV mirror, and EUV lithography apparatus

A mirror () for the EUV wavelength range having a reflectivity of greater than 40% for at least one angle of incidence of between 0&#xb0; and 25&#xb0; includes a substrate (S) and a layer arrangement, wherein the layer arrangement has at least one non-metallic individual layer (B, H, M), and wherein the non-metallic individual layer (B, H, M) has a doping with impurity atoms of between 10 ppb and 10%, in particular between 100 ppb and 0.1%, providing the non-metallic individual layer (B, H, M) with a charge carrier density of greater than 6*10cmand/or an electrical conductivity of greater than 1*10S/m, in particular with a charge carrier density of greater than 6*10cmand/or an electrical conductivity of greater than 1 S/m.

Mirror for the EUV wavelength range, method for producing such a mirror, and projection exposure apparatus comprising such a mirror

A mirror (') for the EUV wavelength range and having a substrate (S) and a layer arrangement, wherein the layer arrangement includes at least one surface layer system (P&#x2032;&#x2033;) consisting of a periodic sequence of at least two periods (P) of individual layers, wherein the periods (P) include two individual layers composed of different materials for a high refractive index layer (H&#x2032;&#x2033;) and a low refractive index layer (L&#x2032;&#x2033;), wherein the layer arrangement includes at least one surface protecting layer (SPL, L) or at least one surface protecting layer system (SPLS) having a thickness of greater than 20 nm, and preferably greater than 50 nm.

Mirror for the EUV wavelength range, substrate for such a mirror, projection objective for microlithography comprising such a mirror or such a substrate, and projection exposure apparatus for microlithography comprising such a projection objective

A mirror () for use e.g. in an EUV lithography apparatus or an EUV mask metrology system, with: a substrate () and a coating () reflective to EUV radiation (), the reflective coating having a capping layer () composed of an oxynitride, in particular composed of SiNO, wherein a nitrogen proportion x in the oxynitride NOis between 0.4 and 1.4. Also provided are an EUV lithography apparatus having at least one such EUV mirror () and a method for operating such an EUV lithography apparatus.

EUV mirror comprising an oxynitride capping layer having a stable composition, EUV lithography apparatus, and operating method

In order to produce stress-reduced reflective optical elements () for an operating wave length in the soft X-ray and extreme ultraviolet wavelength range, in particular for use in EUV lithography, it is proposed to apply, between substrate () and a multilayer system () optimized for high reflectivity at the operating wavelength, a stress-reducing multilayer system () with the aid of particle-forming particles having an energy of 40 eV or more, preferably 90 eV or more. Resulting reflective optical elements are distinguished by low surface roughness, a low number of periods in the stress-reducing multilayer system and also highvalues of the stress-reducing multilayer system.

Reflective optical element and method for production of such an optical element

In order to produce stress-reduced reflective optical elements () for an operating wave length in the soft X-ray and extreme ultraviolet wavelength range, in particular for use in EUV lithography, it is proposed to apply, between substrate () and a multilayer system () optimized for high reflectivity at the operating wavelength, a stress-reducing multilayer system () with the aid of particle-forming particles having an energy of 40 eV or more, preferably 90 eV or more. Resulting reflective optical elements are distinguished by low surface roughness, a low number of periods in the stress-reducing multilayer system and also high &#x393; values of the stress-reducing multilayer system.

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Aalen, Germany

Gisela Von Blanckenhagen