Advanced Micro Devices Corporation

Globalfoundries Inc.

Gisela Schammler

Stephan Kronholz

Frank G Kuechenmeister

Richard Carter

Fernando Koch

Berthold Reimer

Ehrenfried Zschech

Mathias Boettcher

Mathias Böttcher

Daniel Gehre

Berthold Reimes

In sophisticated approaches for forming high-k metal gate electrode structures in an early manufacturing stage, a threshold adjusting semiconductor alloy may be deposited on the basis of a selective epitaxial growth process without affecting the back side of the substrates. Consequently, any negative effects, such as contamination of substrates and process tools, reduced surface quality of the back side and the like, may be suppressed or reduced by providing a mask material and preserving the material at least during the selective epitaxial growth process.

Reducing contamination in a process flow of forming a channel semiconductor alloy in a semiconductor device

A semiconductor device comprises a material layer adapted to efficiently stop alpha particles that are substantially generated within a solder bump of a flip chip device. The materials used for stopping the alpha particles are compatible with standard back-end processing and do not degrade adhesion of the solder bump to the remaining substrate. Moreover, a low electrical resistance is maintained and heat dissipation may be improved.

Soft error resistant semiconductor device

A solder bump structure and a method for forming the same are disclosed. Over a contact pad a first and a second metal film are deposited, wherein the second metal film is patterned prior to the deposition of a solder bump material such that an opening isolates an inner region of the second metal film from an outer region of the second metal film. The solder material deposited on the inner region and, at least partially, in the opening serves as an etch stop for a subsequent removal of the outer region.

Solder bump structure and a method of forming the same

Growing community of inventors

Dresden, Germany

Gisela Schammler