Siliconix Technology C. V.

International Rectifier Corporation

Vishay General Semiconductor, Inc.

Giovanni Richieri

Rossano Carta

Luigi Merlin

Laura Bellemo

Carmelo Sanfilippo

Sanfilippo Carmelo

Isabella Para

Paolo Mercaldi

A local thinning process is employed on the backside of a semiconductor substrate such as a wafer in order to improve the thermal performance of the electronic device built on or in the front side of the wafer.

Local semiconductor wafer thinning

A SiC Schottky diode which includes a Schottky barrier formed on a silicon face 4H&#x2014;SiC body.

Silicon carbide schottky diode

A SiC JFET that includes a plurality of trenches formed in a SiC semiconductor body of one conductivity each trench having a region of another conductivity formed in the bottom and sidewalls thereof.

Power semiconductor switch with plurality of trenches

Silicon carbide Schottky diode

A process for forming a trench Schottky barrier device includes the forming of an oxide layer within the trenches in the surface of a silicon wafer, and then depositing a full continuous metal barrier layer over the full upper surface of the wafer including the trench interiors and the mesas between trenches with a barrier contact made to the mesas only. Palladium, titanium or any conventional barrier metal can be used.

Trench Schottky device with single barrier

A trench-type Schottky semiconductor device and a method for fabricating the trench-type Schottky semiconductor device are disclosed. The method includes the steps of forming an epitaxial (EPI) layer atop a silicon substrate, forming a nitride layer atop the EPI layer, patterning a plurality of windows in the nitride layer into an active region and a termination region, forming a plurality of trenches in the active and termination regions such that the plurality of trenches in the termination regions are spaced apart from each other so as to form a plurality of mesas, lining the first type of trenches with a gate oxide layer, and converting the mesas to oxide mesas; and then applying a barrier layer metal to the mesas in the device active area and in the termination trenches.

Process for manufacture of trench Schottky

Power semiconductor switch

A mask structure and process for forming trenches in a silicon carbide or other wafer, and for implanting impurities into the walls of the trenches using the same mask where the mask includes a thin aluminum layer and a patterned hard photoresist mask. A thin LTO oxide may be placed between the metal layer and the hard photoresist mask.

Mask structure for manufacture of trench type semiconductor device

A trench MOS Schottky barrier device has a metal oxide gate dielectric such as TiSi lining the trench wall to increase the efficiency of the elemental cell and to improve depletion in the mesa during reverse bias. A reduced mask process is used in which a single layer of titanium or other metal is deposited on an underlying gate oxide layer on the trench walls and directly atop the mesa between adjacent trenches. A common thermal treatment causes the Ti to diffuse into the SiOgate oxide to form the TiOgate and to form the TiSi Schottky barrier on the top surface of the mesa.

Trench MOS Schottky barrier rectifier with high k gate dielectric and reduced mask process for the manufacture thereof

A process for forming an ohmic contact on the back surface of a semiconductor body includes depositing a donor layer on the back surface of the semiconductor body followed by a sintering step to form a shallow intermetallic region capable of forming a low resistance contact with a contact metal.

Growing community of inventors

Druento, Italy

Giovanni Richieri