Siemens Telecomunicazioni S.p.a.

Siemens Inofmraton and Communication Networks S.p.a.

Giovanni Mora

Carlo Buoli

Tommaso Turillo

A voltage controlled oscillator formed as a first layout with metallized areas by a planar technique is located on a high dielectric loss substrate. A second layout formed of metallized area for control circuits of the voltage controlled oscillator is formed on a high loss dielectric substrate is also formed by the same technique as the first layout. A ground plane for the controlling oscillator is formed on an opposite side of the dielectric substrate on which the voltage controlled oscillator is formed.

Microwave voltage controlled oscillator formed and located on a high dielectric loss substrate with a controlled circuit

A microwave oscillator has a cavity which is excited with an active element. The phase noise characteristic of the oscillator is improved in that a frequency discriminator utilizes the same oscillator cavity. The waves transmitted and reflected by the cavity are measured, combined and detected by a pair of low noise diodes. The signals obtained are compared to produce a control signal for a phase shifter which is connected between the active element and the cavity. The cavity is preferably a dielectric resonator.

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Fontanella, Italy

Giovanni Mora