Sumitomo Chemical Company, Limited

Giovanni Ferrara

Takahiro Seike

Daisuke Inokuchi

Miki Nishi

To improve detectivity of a photoelectric conversion element (). A photoelectric conversion element including a pair of electrodes (), an active layer () provided between the pair of electrodes, and an intermediate layer () provided between the active layer and at least one of the pair of electrodes, in which the intermediate layer has a surface that is in contact with the active layer, the surface having a surface roughness having an absolute value greater than 0.22 nm but smaller than 1.90 nm, and in which the active layer is not less than 350 nm but not more than 800 nm in thickness.

Photoelectric conversion element

This light detecting element has a reduced dark current and improved external quantum efficiency. The light detecting element includes a positive electrode, a negative electrode, and an active layer that is provided between said positive electrode and said negative electrode, and that contains a p-type semiconductor material and an n-type semiconductor material. The thickness of the active layer is at least 800 nm. The value obtained by subtracting the absolute value of the LUMO of the n-type semiconductor material from the work function of the surface in contact with the negative electrode side surface of the active layer is 0.0 to 0.5 eV. The absolute value of the LUMO of the n-type semiconductor material is 2.0 to 10.0 eV.

Light detecting element

To reduce the dark current ratio. A photoelectric conversion elementincluding an anode, a cathode, an active layerprovided between the anode and the cathode, and at least one electron transportation layerprovided between the active layer and the cathode, in which

Photoelectric conversion element and manufacturing method thereof

This light detecting element has a simple configuration, and is highly sensitive to a prescribed wavelength region. The light detecting element comprises a positive electrode, a negative electrode, and an active layer that is provided between the positive electrode and the negative electrode, and that includes a p-type semiconductor material and n-type semiconductor material. The thickness of the active layer is at least 800 nm. The weight ratio between the p-type semiconductor material and the n-type semiconductor material included in the active layer (p/n ratio) is at most 99/1. The work function of the negative electrode side surface in contact with the active layer is lower than the absolute value of the LUMO energy level of the n-type semiconductor material.

A photoelectric conversion element capable of reducing a specific dark current. In a photoelectric conversion element () including an anode (), a cathode (), and an active layer () provided between the anode and the cathode, the active layer contains a p-type semiconductor material having a band gap of 0.5 eV to 1.58 eV, and an n-type semiconductor material, the n-type semiconductor material is a Cfullerene derivative, and on an image obtained by binarizing an image of the active layer observed by a transmission electron microscope, the junction length between a phase of the n-type semiconductor material and a phase of the p-type semiconductor material is 120 &#x3bc;m to 170 &#x3bc;m per square micrometer of the area of the binarized image.

Growing community of inventors

Ibaraki, Japan

Giovanni Ferrara