Eniricerche S.p.a.

Sacmi-cooperativa Meccanici Imola-soc. Coop A.r.l.

Giorgio Sberveglieri

Matteo Falasconi

Alberto Camanzi

Guido Faglia

Elisabetta Comini

Camilla Baratto

The gas sensor device of the semiconductor film type comprises, on a single face of it, at least one gas sensor, a resistive heating film and pads for electrical contact of the sensors and of the resistive heating film; the heating element, the gas sensor film and the contact pads are made entirely by sputter deposition.

Thin semiconductor film gas sensor device

A solid-state sensor is described for determining hydrogen and/or NO.sub.x concentration and the method for its preparation, it comprising a support on which a thin film of thickness between 80 and 200 nm is deposited consisting of tin (Sn) and bismuth (Bi) oxides, the quantity of bismuth in the thin film being between 5 and 7% in terms of atomic weight.

Solid-state sensor for determining hydrogen and/or NO.sub.x

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Cavriago, Italy

Giorgio Sberveglieri