Taiwan Semiconductor Manufacturing Comp. Ltd.

Gin Jei Wang

Shau-Lin Shue

Chih-Wei Chang

Chii-Ming M Wu

Cheng-Tung Lin

Chao-Hsien Peng

Shih-Wei Chou

A method for forming nickel silicide includes degassing a semiconductor substrate that includes a silicon surface. After the degassing operation, the substrate is cooled prior to a metal deposition process, during a metal deposition process, or both. The cooling suppresses the temperature of the substrate to a temperature less than the temperature required for the formation of nickel silicide. Nickel diffusion is minimized during the deposition process. After deposition, an annealing process is used to urge the formation of a uniform silicide film. In various embodiments, the metal film may include a binary phase alloy containing nickel and a further element.

Method for silicide formation on semiconductor devices

A method for forming a semiconductor device is described. An opening is formed in a first dielectric layer, exposing an active region of the transistor, and an atomic layer deposited (ALD) TaN barrier is conformably formed in the opening, at a thickness less than 20 &#x212b;. A copper layer is formed over the atomic layer deposited (ALD) TaN barrier to fill the opening.

Method for forming a semiconductor device

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Changhua, Taiwan

Gin Jei Wang