Snaptrack Incorporated

Rf360 Europe Gmbh

Epcos Ag

Gilles Moulard

Paul Muralt

Ramin Matloub

Thomas Metzger

Maximilian Schiek

Monika Schmiedgen

Andre Schwobel

A BAW resonator comprises a center area (CA), an underlap region (UL) surrounding the center area having a thickness smaller than the thickness dof the center region and a frame region (FR), surrounding the underlap region having thickness dgreater than d.

BAW resonator with increased quality factor

Certain aspects of the present disclosure provide a bulk acoustic wave (BAW) resonator having a substrate with a heatsink region and an electrical insulator region. An example electroacoustic device generally includes a piezoelectric layer, a first electrode structure, a second electrode structure, one or more reflector layers, and a substrate having a heatsink region and an electrical insulator region. The heatsink region is arranged under a first portion of the first electrode structure, the first portion of the first electrode structure overlapping the second electrode structure. The insulator region is arranged under a second portion of the first electrode structure, the second portion of the first electrode structure being adjacent to the first portion of the first electrode structure.

Bulk acoustic wave resonator with a heatsink region and electrical insulator region

A filter comprising first and second BAW resonators. The first BAW resonator having a piezoelectric layer, located between a top electrode and a bottom electrode, and a dielectric layer located between the bottom electrode and an additional electrode. Wherein the dielectric layer, the bottom electrode and the additional electrode are configured to provide an additional capacitance in the resonator. The second BAW resonator having at least one less electrode than the first BAW resonator.

BAW resonator and resonator arrangement

A MEMS component includes a lower electrode. The MEMS component also includes an upper electrode. The upper electrode overlies the lower electrode. The MEMS component also includes a first piezoelectric layer between the lower electrode and the upper electrode. The first piezoelectric layer has a first piezoelectric material comprising AlN and Sc.

MEMS component having AlN and Sc and method for manufacturing a MEMS component

A BAW component is provided. A method for manufacturing a BAW component is also provided. The component includes a bottom electrode, a top electrode and a first piezoelectric material. The first piezoelectric material is between the bottom electrode and the top electrode. The first piezoelectric material has a higher piezoelectric coefficient than AlN.

BAW component and method for manufacturing a BAW component

A BAW component, a lamination for a BAW component, and a method for manufacturing a BAW component are provided. A lamination for a BAW component includes a first layer with a first piezoelectric material and a second layer with a second piezoelectric material that is different than the first piezoelectric material. The first and the second piezoelectric material can be Sc doped AlN and AlN, respectively.

BAW component, lamination for a BAW component, and method for manufacturing a BAW component

A microelectromechanical systems device package includes a MEMS device mounted in flip-chip technology on a substrate. A film of non-evaporable getter material is disposed between the substrate and the MEMS device. A cover structure encapsulates the MEMS device. This invention further provides a method for manufacturing the microelectromechanical systems device package.

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Munich, Germany

Gilles Moulard