Centre National De La Recherche Scientifique

Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Université Joseph Fourier

Institucio Catalana De Recerca I Estudis Avancats (icrea)

Institut Catala De Nanotechnologia (icn)

Commissariat a L'energie Atomique

Antaios

Institut Catala De Nanotechnologia

Gilles Louis Gaudin

Ioan Mihai Miron

Alain Schuhl

Jean-Pierre Nozieres

Olivier Boulle

Pietro Gambardella

Pierre-Jean Zermatten

Safeer Chenattukuzhiyil

Witold Kula

Philippe Sabon

Marc Drouard

Safeer Chenattukuz Hiyil

Alexandru Trifu

François Montaigne

Emmanuelle Algre

Ahmad Bsiesy

A magnetic memory (MRAM) cell, comprising: a first layer formed from a substantially electrically conductive material; and a magnetic tunnel junction (MTJ) stack formed over the first layer, wherein the MTJ stack comprises: a ferromagnetic reference layer having an in-plane reference magnetization; a tunnel barrier layer; and a ferromagnetic storage layer between the tunnel barrier layer and the first layer, the storage layer having an in-plane storage magnetization; wherein the MTJ stack comprises an arrangement for providing an in-plane uniaxial anisotropy in the storage layer; wherein said in-plane uniaxial anisotropy makes an angle with the direction of the write current that is between 5&#xb0; and 90&#xb0;, and wherein said in-plane uniaxial anisotropy has an energy between 40 and 200 kBT and wherein coercivity is larger than 200 Oe.

Magnetic memory cell having deterministic switching and high data retention

A memory cell, including a stack of: a conductive layer of a conductive material including a first chemical element; an oxide layer sufficiently thin to allow the flowing of a current by tunnel effect; and a conductive ferromagnetic layer having a programmable magnetization and including a second chemical element, wherein the oxide layer includes the first and second chemical elements.

Magnetic memory cell of current programming type

The invention relates to a magnetic memory cell (), comprising: a stack () including a magnetic layer section () between a conductive layer section () and a section () of a layer that is different from the conductive layer, the magnetic layer having a magnetisation () perpendicular to the plane of the layers; a metallisation section () on which the stack is placed; and first, second, third and fourth metallisation arms (D toG), each arm having a median axis (D toG), wherein, for each arm, a current flowing towards the stack in the direction of the median axis sees that portion of the stack which is closest the arm mostly on its left for the first and second arms (E,G), and mostly on its right for the third and fourth arms (D,F).

Magnetic memory cell

A magnetic memory element includes a contact with a magnetic layer portion between a conductive layer portion and a non-magnetic layer portion. The magnetic layer has a magnetization perpendicular to the plane of the layers, and an angled conductive track-having a central portion extended by two arms, the contact being entirely arranged on the track. For each arm, a current flowing towards the contact along the median axis of the arm encounters the portion of the contact nearest to the arm primarily on the left thereof for one of the arms, and primarily on the right thereof for the other arm.

Magnetic memory element

A memory slot including a pad formed of a stack of regions made of thin layers, including a first region made of a nonmagnetic conducting material; a second region made of a magnetic material exhibiting a magnetization in a direction perpendicular to the principal plane of the pad; a third region made of a nonmagnetic conducting material of different characteristics to those of the first region; the pad resting on a conducting track adapted to cause the flow of a programming current of chosen sense, in which the pad has an asymmetric shape with respect to any plane perpendicular to the plane of the layers and parallel to the central axis of the track, and with respect to its barycenter.

Magnetic memory cell with asymmetrical geometry programmable by application of current in the absence of a magnetic field

Integrated magnetometer comprising a plurality of multilayer magnetoresistive sensors deposited on a surface, called the top surface, of a substantially planar substrate, characterized in that said top surface of the substrate has at least one cavity or protuberance provided with a plurality of inclined faces, and in that at least four said magnetoresistive sensors are placed on four said magnetoresistive sensors are placed on four said inclined faces, having different orientations and opposite one another in pairs, each sensor being sensitive to one component of an external magnetic field parallel to that face on which it is placed. Process for manufacturing such a magnetometer.

Integrated magnetometer and its manufacturing process

The invention relates to a writable magnetic element comprising a stack of layers presenting a write magnetic layer, wherein the stack has a central layer of at least one magnetic material presenting a direction of magnetization that is parallel or perpendicular to the plane of the central layer, said central layer being sandwiched between first and second outer layers of non-magnetic materials, the first outer layer comprising a first non-magnetic material and the second outer layer comprising a second non-magnetic material that is different from the first non-magnetic material, at least the second non-magnetic material being electrically conductive, wherein it includes a device for causing current to flow through the second outer layer and the central layer in a current flow direction parallel to the plane of the central layer, and a device for applying a magnetic field having a component along a magnetic field direction that is either parallel or perpendicular to the plane of the central layer and the current flow direction, and wherein the magnetization direction and the magnetic field direction are mutually perpendicular.

Writable magnetic memory element

The invention relates to a writable magnetic element comprising a stack of layers presenting a write magnetic layer, wherein the stack has a central layer of at least one magnetic material presenting magnetization having a magnetization direction that is parallel to the plane of the central layer, which layer is sandwiched between first and second outer layers of non-magnetic materials, the first outer layer comprising a first non-magnetic material and the second outer layer comprising a second non-magnetic material that is different from the first non-magnetic material, at least the second non-magnetic material being electrically conductive, and wherein it includes a device to cause a write current to pass through the second outer layer and the central layer in a current flow direction parallel to the plane of the central layer at an angle &#x3b1; lying in the range 90&#xb0;&#xb1;60&#xb0;, in particular 90&#xb0;&#xb1;30&#xb0;, and more particularly 90&#xb0;&#xb1;15&#xb0; relative to said magnetization direction in order to generate an effective magnetic field in the central layer, the current being applied either in a first direction or in a second direction opposite to the first, in order to orient the magnetization direction in a first magnetization direction or in a second magnetization direction opposite to the first.

Writable magnetic element

The invention relates to a writable magnetic element comprising a stack of layers presenting a write magnetic layer, wherein the stack has a central layer of at least one magnetic material presenting a direction of magnetization that is perpendicular to the plane of the central layer, said central layer being sandwiched between first and second outer layers of non-magnetic materials, the first outer layer comprising a first non-magnetic material and the second outer layer comprising a second non-magnetic material that is different from the first non-magnetic material, at least the second non-magnetic material being electrically conductive, and wherein it includes a device for causing current to flow through the second outer layer in a current flow direction parallel to the plane of the central layer, and a device for applying a magnetic field along a magnetic field direction that is perpendicular to the plane of the central layer.

A magnetic recording device comprising at least one unstructured recording support exhibiting at least one elementary magnetic layer, the recording support having a magnetization perpendicular to the plane of the support characterized in that it comprises magnetic elements having a magnetization perpendicular to the plane of the support and a greater inversion field than the inversion field of the recording support, and which are separated from the recording support by a decoupling layer made of a nonmagnetic material so that the magnetic elements produce a dipolar field in the recording support. The magnetic elements are spaced apart from one another by nonmagnetic regions, each magnetic element defining during a write operation a memory point in the recording support.

Magnetic recording device, especially for a hard disk and its manufacturing process

This invention relates to a recording medium comprising:

Growing community of inventors

Grenoble, France

Gilles Louis Gaudin