Nxp B.v.

Ipdia

Murata Integrated Passive Solutions

Gilles Ferru

Serge Bardy

Jean-René Tenailleau

Nicolas Nohlier

Jacques Le Berre

Bertrand Courivaud

A semiconductor device comprising at least two holes () realized in a substrate (), having each a width and a depth, and forming a diode (), wherein the substrate () has a determined type of doping, wherein the inner wall of each hole () is doped so that its doping is of the other type than the doping of the substrate (), and wherein the width and/or the depth of a hole () is different from the width and/or the depth of a neighboring hole.

Semiconductor device comprising a diode and electrostatic discharge protection device

The invention relates to an interposer device comprising a doped silicon substrate () having an epitaxial layer () on a first side and two through vias () extending from the first side to a second side opposite to the first side of the doped silicon substrate. Each through via comprises a volume of doped silicon substrate delimited by a surrounding trench () extending from the first to the second side of the doped silicon substrate such that said surrounding trench is arranged so as to electrically isolate the doped silicon substrate surrounded by said trench. First and second conductive layers () are laid respectively on first and second sides of the first through via so as to be electrically connected together and third and fourth conductive layers () are laid respectively on surfaces of the second through via so as to be electrically connected together. The first () and third () conductive layers are connected together by means of a back-to-back diode () wherein the diodes are isolated by a diode trench () having a depth at least equal to that of the epitaxial layer (). A method of forming the interposer device is also provided.

Interposer device

A LED package includes a LED die, and a memory device. The memory device is arranged for holding LED data information for driving the LED die. A LED driver arrangement includes a LED package as described above, a LED driver device and a microcontroller. The microcontroller is connected to the memory device for accessing the LED data information for driving the LED die and to the LED driver for sending an output flux settings signal. The LED driver device is connected to the LED die for providing a driving signal to the LED die, the driving signal being based on the output flux in package settings signal from the microcontroller.

LED package and method for manufacturing such a LED package

The present invention relates to an electronic device for providing improved heat transporting capability for protecting heat sensitive electronics and a method for producing the same. The present invention also relates to uses of the electronic device for various applications such as in LED lamps for signalizing, signage, automative and illumination applications or a display apparatus or any combinations thereof.

Thermal isolation of electronic devices in submount used for LEDs lighting applications

A method of providing a region of doped semiconductor () which is buried below the surface of a semiconductor substrate () without the requirement of epitaxially deposited layers is provided. The method includes the steps of forming first and second trench portions () in a semiconductor substrate and then introducing dopant () into the trench portions and diffusing the dopant into the semiconductor substrate such that a region of doped semiconductor () is formed extending from the first trench portion to the second trench portion. A diffusion barrier, for example formed of two barrier trenches (), is provided in the substrate adjacent the doping trenches to inhibit lateral diffusion of dopant from the doping trenches so as to maintain an undoped region () above the region of doped semiconductor. Advantageously, the electrical properties of the buried layer can be adjusted by varying the depths and size/spacing of the doping trenches and diffusion barrier(s), and the doping and diffusion parameters. The doping trenches can later be filled with polysilicon to provide electrical contact to the buried doped region.

Growing community of inventors

Cairon, France

Gilles Ferru