Samsung Electronics Co., Ltd.

Gilhwan Son

Byounghak Hong

Kang-ill Seo

Hoonseok Seo

Saehan Park

Jeonghyuk Yim

Kiil Kim

Methods of forming an integrated circuit devices may include forming a transistor on a first surface of a substrate. The transistor may include an active region, a source/drain region contacting the active region and a gate electrode on the active region. The methods may also include forming a conductive wire that is electrically connected to the source/drain region, forming a trench extending through the substrate by etching a second surface of the substrate, which is opposite the first surface of the substrate, and forming a power rail in the trench. The power rail is electrically connected to conductive wire.

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Clifton Park, NY, United States of America

Gilhwan Son