Applied Materials, Inc.

Covidien LP

Nellcor Puritan Bennett Incorporated

Gilbert Hausmann

Vijay D Parkhe

Michael Patrick O'Neil

Shannon Eleanor Campbell

Clark Raymond Baker, Jr

Jagadish Kalyanam

Mei Yin Chang

Zheng Xu

Paul David Mannheimer

Anantha K Subramani

Bradley Owen Stimson

Michael N Sugarman

Gongda Yao

Michael Sterling Jackson

Nitin Khurana

Suraj Rengarajan

Srinivas Guggilla

Peter Satitpunwaycha

Barney M Cohen

Raymond Gristi

Lawrance A Ringor

Chia-Au Bill Lu

Chia-Ao Lu

Martin Kranz

Embodiments disclosed herein may include systems and methods for determining a patient's respiratory effort and blood oxygen saturation based on data acquired from a pulse oximetry sensor and analyzing the parameters in conjunction with each other. For example, the respiratory effort may be determined based on a photo-plethysmographic waveform generated from light attenuation detected by the sensor, and the blood oxygen saturation may be a pulse-based estimate of arterial blood oxygen saturation determined from the detected attenuation. Analysis of the parameters may enable detection and classification of apnea (e.g., obstructive or central) or another underlying cause for respiratory instability. Furthermore, the measured respiratory effort may be compared to respiratory effort supplied by a ventilator to ensure proper sensor placement before enabling automatic adjustment of ventilator settings.

Method and system for classification of photo-plethysmographically detected respiratory effort

Embodiments disclosed herein may include systems and methods for determining a patient's respiratory effort and blood oxygen saturation based on data acquired from a pulse oximetry sensor and analyzing the parameters in conjunction with each other. For example, the respiratory effort may be determined based on a photo-plethysmographic waveform generated from light attenuation detected by the sensor, and the blood oxygen saturation may be a pulse -based estimate of arterial blood oxygen saturation determined from the detected attenuation. Analysis of the parameters may enable detection and classification of apnea (e.g., obstructive or central) or another underlying cause for respiratory instability. Furthermore, the measured respiratory effort may be compared to respiratory effort supplied by a ventilator to ensure proper sensor placement before enabling automatic adjustment of ventilator settings.

Embodiments of the present invention relate to a system and method for practicing spectrophotometry using light emitting nanostructures. Specifically, embodiments of the present invention include a physiologic sensor comprising a sensor body configured for placement adjacent pulsatile tissue of a patient, a first light emitting nanostructure device configured to emit light at a first wavelength through the pulsatile tissue, a second light emitting nanostructure device configured to emit light at a second wavelength through the pulsatile tissue, and a light detector configured to detect the light at the first wavelength and the light at the second wavelength after dispersion through the pulsatile tissue.

System and method for practicing spectrophotometry using light emitting nanostructure devices

A method for managing at least one breathing condition may include storing an agent near a patient's airway and delivering the agent to the mucosal tissue in the pharyngeal area in a time-released manner during a sleep period. The delivered agent may cause increased contraction of muscle tissue in the pharyngeal area.

Managing obstructive sleep apnea and/or snoring using local time released agents

Generally, a method for pre-cleaning native oxides and other contaminants from apertures on a substrate is provided. In one embodiment, a method for pre-cleaning apertures on a substrate includes disposing the substrate on a support member in a process chamber, cooling the substrate at least to a temperature of 100 degrees Celsius, and exposing the substrate to a pre-clean process. In another embodiment, a method for pre-cleaning apertures on a substrate includes cooling the substrate at least to a temperature of 100 degrees Celsius in a first chamber, transferring the substrate to a second chamber and pre-cleaning the substrate in the second chamber while maintaining a substrate temperature of 100 degrees Celsius.

Method and apparatus for cleaning substrates

The present invention provides a method and precursor for forming a metal and/or metal nitride layer on the substrate by chemical vapor deposition. The organometallic precursor has the formula of (Cp(R) ) MH , where Cp is a cyclopentadienyl functional group, R is a substituent on the cyclopentadienyl functional group comprising an organic group having at least one carbon-silicon bond, n is an integer from 0 to 5, x is an integer from 1 to 4, M is a metal, and y is the valence of the metal M. A metal, metal nitride, metal carbon nitride, or metal silicon nitride film is deposited on a heated substrate by thermal or plasma enhanced decomposition of the organometallic precursor in the presence of a processing gas, such as hydrogen, nitrogen, ammonia, silane, and combinations thereof, at a pressure of less than about 20 Torr. By controlling the reactive gas composition either metal or metal nitride films may be deposited. The deposited metal or metal nitride film may then be exposed to a plasma to remove contaminants, densify the film, and reduce film resistivity.

Chemical vapor deposition of barriers from novel precursors

The invention generally provides an apparatus and a method of removing metal oxides, particularly copper oxides and aluminum oxides, from a substrate surface. Primarily, the invention eliminates sputtering of copper oxide from the bottom of an interconnect feature onto the side walls of an interconnect feature, thereby preventing diffusion of the copper atom through the dielectric material and degradation of the device. The invention also eliminates sputtering of the copper oxides onto the chamber side walls that may eventually flake off and cause defects on the substrate. The method of reducing metal oxides from a substrate surface comprises placing the substrate within a plasma processing chamber, flowing a processing gas comprising hydrogen into the chamber, and maintaining a plasma of the processing gas within the chamber through inductive coupling. The method is preferably performed using a dual frequency etch chamber wherein adjustments are made in the processing gas flow, the RF powers and the exhaust pumping speeds to eliminate sputtering of the copper oxide and to maximize the reduction reaction.

Reduction of metal oxide in a dual frequency etch chamber

A method of depositing a metal nitride material, formed by the decomposition of an organometallic precursor, useful as a barrier layer for an integrated circuit using a conducting metal. More particularly, the invention provides a method of depositing a niobium nitride layer on a substrate for use in copper metallization. In one aspect of the invention an organometallic precursor having the formula Nb(NRR&prime;) , the formula (NRR&prime;) Nb&boxH;NR&Prime;, or combinations thereof, is introduced into a processing chamber in the presence of a processing gas, such as ammonia, and the metal nitride film is deposited by the thermal or plasma enhanced decomposition of the precursor on a substrate. The deposited niobium nitride layer is then exposed to a plasma to remove contaminants, reduce the film's resistivity, and densify the film.

Chemical vapor deposition of niobium barriers for copper metallization

A cathode assembly having a pedestal and a detachable susceptor. Various contact assemblies containing a canted spring are utilized to make electrical connection between the pedestal and detachable susceptor. The canted spring has coils that are tilted in one direction and joined end to end to form a doughnut shape. Such a spring creates multiple parallel self-loading electrical connections via the turns of the spring. The turns act like electrical wires to ensure reliable RF electrical energy transfer. The canted spring contact of the present invention allows for flat contact between the pedestal and the chuck.

Cathode assembly containing an electrostatic chuck for retaining a wafer in a semiconductor wafer processing system

An apparatus and method for actively controlling surface potential of an electrostatic chuck. The apparatus and method utilize a sensor and a control circuit. The sensor comprises an antenna on the chuck surface coupled to a field effect transistor (FET). The sensor produces a signal indicative of an electrical characteristic such as surface potential of the electrostatic chuck. The sensor signal provides feedback to the control circuit. The control circuit compares the sensor signal to a predetermined setpoint corresponding to a desired value of the surface potential. The control circuit provides a control signal to a power supply coupled to one or more chuck electrodes. The control signal causes the power supply to change the electrode voltage such that the resulting change in surface potential tends to null the difference between the sensor signal and the set point thus ensuring a constant chucking force.

Apparatus and method for actively controlling surface potential of an electrostatic chuck

An apparatus and method for ex-situ measurement of electrostatic chuck performance parameters and correlating ex-situ measurements to in-situ chuck performance. The apparatus comprises a probe, a fixture, a data acquisition system and a controller. The fixture secures a probe head in a substantially fixed position relative to the chuck. The apparatus coordinates measurements of the chuck surface potential as a function of time with the voltage applied to the chuck electrodes. The method comprises fixing the chuck and probe head to the fixture, measuring an ex-situ performance parameter of the chuck, such as surface potential, and comparing the measured parameter to a predetermined in-situ performance profile. The ex-situ performance parameter measurement can be measured as a function of time and/or coordinated with a change in the voltage applied to the chuck electrodes. By comparing the measured parameter to an ideal in-situ performance profile, the ex-situ measurement serves as a predictor of in-situ chuck behavior.

Apparatus and method for ex-situ testing of performance parameters on an

This invention relates to an apparatus comprising a Johnsen-Rahbek electrostatic chuck having a conductive stand-off pad and a method of fabricating the chuck. More specifically, the stand-off pad is made of a conductive polymeric material, such as a polyimide, which is disposed upon a semiconducting or partially conducting layer of the chuck. The polymeric material has a controlled resistivity within a range of about 10.sup.7 -10.sup.12 ohm-cm, which allows a wafer, or other workpiece, to be supported and retained upon the electrostatic chuck via the Johnsen-Rahbek effect.

Conductive polymer pad for supporting a workpiece upon a workpiece

An electrostatic chuck including a body of ceramic and a metal backing portion for mounting the chuck directly to a metal pedestal and a process of manufacturing the electrostatic chuck using sintering. The electrostatic chuck contains a metal backing portion having at least one hole extending therethrough and the body of ceramic includes at least one portion extending through the hole.

Apparatus for retaining a subtrate in a semiconductor wafer processing

Method and apparatus for restoring a support surface of a substrate support to a pre-process condition. The method comprises the steps of providing a surrogate substrate on the degraded support surface, providing the surrogate substrate with a ground connection and establishing an electric field between the support surface and the surrogate substrate to remove accumulated charges in the support surface. The apparatus comprises a process chamber having a surrogate substrate on a the support surface and connected to ground. The surrogate substrate is a semiconductor wafer or a plate or sheet of metallic material. The ground connection is established by striking a plasma that contacts the surrogate substrate and an electrical ground reference. The electric field established between the support surface and the surrogate substrate 'pushes' any accumulated charges out of the support surface. Removal of the accumulated charges improves and extends the chucking ability of the support surface. The subject method also maintains the integrity of the support surface material as it is not attacked by highly energized and/or reactive species in a plasma.

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Felton, CA, United States of America

Gilbert Hausmann