Samsung Electronics Co., Ltd.

Gil-woo Song

Yu-sin Yang

Hyoung-jo Jeon

Sung-yoon Ryu

Kang-woong Ko

Chung-sam Jun

Yun-jung Jee

Masahiro Horie

Sang-kil Lee

Byeong-hwan Jeon

Woo-seok Ko

Young-hoon Sohn

Tae-Heung Ahn

Sang-kyeong Han

Provided are a method of inspecting a surface and a method of manufacturing a semiconductor device. The methods include preparing a substrate, selecting a spatial resolution of a first optical device by setting a magnification of an imaging optical system, emitting multi-wavelength light toward a first measurement area of the substrate and obtaining first wavelength-specific images, generating first spectrum data based on the first wavelength-specific images, generating first spectrum data of respective pixels based on the first wavelength-specific images, and extracting a spectrum of at least one first inspection area having a range of the first measurement area or less from the first spectrum data, and analyzing the spectrum. The first optical device includes a light source, an objective lens, a detector, and an imaging optical system. The obtaining first wavelength-specific images includes using the imaging optical system and the detector.

Method of inspecting surface and method of manufacturing semiconductor device

A surface inspecting method includes: irradiating an incident light beam of a first polarized state on a target object, the incident light beam comprising parallel light and having a cross-sectional area: measuring a second polarized state of a reflected light beam reflected from the target object; and performing inspection on an entire area of the target object on which the incident light beam is irradiated, based on a variation between the first polarized state and the second polarized state.

Surface inspecting method

A method for detecting an overlay error includes: forming a first overlay key including a plurality of spaced apart first target patterns having a first pitch on a first layer of a substrate; forming a second overlay key including a plurality of spaced apart second target patterns having a second pitch different than the first pitch on a second layer of the substrate below the first layer; irradiating the first layer and the second layer with incident light having a first wavelength; obtaining a phase pattern of light reflected from the first layer and the second layer; calculating a position of a peak point or a valley point of the phase pattern of the reflected light; and detecting an overlay error of the first layer and the second layer using the position of the peak point or the valley point of the phase pattern.

Method for detecting overlay error and method for manufacturing semiconductor device using the same

An ellipsometer for detecting a surface including a light source irradiating a substrate with light, a polarization unit polarizing the light irradiated from the light source and analyzing the polarized light, a detector measuring a light quantity of the polarized light passing through the polarization unit, and a driver rotating the detector by an azimuth angle as the substrate rotates in a direction of the azimuth angle direction may be provided.

Ellipsometer for detecting surface

Growing community of inventors

Hwaseong-si, South Korea

Gil-woo Song