Samsung Electronics Co., Ltd.

Gil-Sub Kim

Seong-Ho Kim

Won-mo Park

Dong-Kwan Yang

Ho-Ju Song

Yong-il Kim

Se-Myeong Jang

Joo-Sung Park

Nam-Jung Kang

Yun-Sung Lee

Jai-kyun Park

Jong-seop Lee

A fuse structure, an e-fuse including the fuse structure and a semiconductor device including the e-fuse are disclosed. The fuse structure includes first and second electrodes extending in a first direction, and spaced a predetermined distance apart from each other and having one ends thereof facing each other, an insulation layer formed between the one end of the first electrode and the one end of the second electrode facing each other, and a conductive film overlapping portions of the first and second electrodes on the insulation layer and contacting the first electrode and the one end of the second electrode.

Fuse structures, e-fuses comprising fuse structures, and semiconductor devices comprising e-fuses

A method of forming an isolation structure includes forming a trench at an upper portion of a substrate, forming a first oxide layer on an inner wall of the trench, oxidizing a portion of the substrate adjacent to the trench to form a second oxide layer such that the portion of the substrate adjacent to the trench has the first oxide layer thereon, forming a nitride layer on the first oxide layer, and forming an insulation layer pattern on the nitride layer such that the insulation layer pattern fills a remaining portion of the trench.

Method of forming an isolation structure and method of forming a semiconductor device

A semiconductor device includes a fuse having the form of a capacitor. The semiconductor device includes a cathode formed on a semiconductor substrate, an anode formed over the cathode, and at least one filament having a cylindrical-shell shape formed between the cathode and the anode and electrically connecting the cathode and the anode.

Semiconductor device including fuse having form of capacitor

A structure included in a semiconductor device can include a fuse box guard ring that defines an interior region of the fuse box inside the fuse box guard ring and that defines an exterior region of the fuse box outside the fuse box guard ring. The fuse box guard ring can include protruding support members that protruding from an interior sidewall or from an exterior sidewall of the fuse box guard ring.

Fuse box guard rings including protrusions and methods of forming same

A semiconductor memory device including a plurality of supports extending parallel to each other in a first direction on a semiconductor substrate, and capacitor lower electrode rows including a plurality of capacitor lower electrodes arranged in a line along the first direction between two adjacent supports from among the plurality of supports, each capacitor lower electrode including outside walls, wherein each of the capacitor lower electrodes includes two support contact surfaces on the outside walls of the capacitor lower electrode, the support contact surfaces respectively contacting the two adjacent supports from among the plurality of supports.

Semiconductor memory device having cylinder-type capacitor lower electrode and associated methods

A method of forming a capacitor includes forming a cylindrical lower electrode structure having an internal support structure on a substrate, forming a dielectric layer on the cylindrical lower electrode structure and the support structure, and forming an upper electrode on the dielectric layer.

Capacitor

Provided is a semiconductor memory device including cylinder type storage nodes and a method of fabricating the semiconductor memory device. The semiconductor memory device includes: a semiconductor substrate including switching devices; a recessed insulating layer including storage contact plugs therein, wherein the storage contact plugs are electrically connected to the switching devices and the recessed insulating layer exposes at least some portions of upper surfaces and side surfaces of the storage contact plugs. The semiconductor device further includes cylinder type storage nodes each having a lower electrode. The lower electrode contacting the at least some portions of the exposed upper surfaces and side surfaces of the storage node contact plugs.

Semiconductor memory device including a cylinder type storage node and a method of fabricating the same

A method of forming a semiconductor memory device includes sequentially forming an etch stop layer and then a mold layer, forming a plurality of line-shaped support structures and a first sacrificial layer filling gaps between the support structures on the mold layer, sequentially forming a plurality of line-shaped first mask patterns, a second sacrificial layer, and then second mask patterns on the support structures and on the first sacrificial layer, removing the second sacrificial layer, the first sacrificial layer, and the mold layer using the first mask patterns, the second mask patterns, and the support structures as masks, removing the first mask patterns and second mask patterns, filling the storage node electrode holes with a conductive material and etching back the conductive material to expose the support structures, and removing the first sacrificial layer and the mold layer to form pillar-type storage node electrodes supported by the support structures.

Method of forming capacitor of semiconductor memory device

Methods of manufacturing a semiconductor device having an RCAT are provided. The method includes forming a first recess having a first depth formed in an active region of a semiconductor substrate, and a second recess having a second depth that is less than the first depth formed in an isolation layer. The depth of the second recess is decreased by removing the isolation layer from the upper surface of the isolation layer by a desired thickness. A gate dielectric layer is formed on an inner wall of the first recess and a gate is formed on the gate dielectric layer.

Growing community of inventors

Suwon-si, South Korea

Gil-Sub Kim