Tel Aviv University

Tower Semiconductor Ltd.

Other

Ramot University Authority for Applied Research and Industrial Development Limited

Gil Rosenman

Yakov Roizin

Simon Litsyn

Yossi Rosenwaks

Ronen-Pavel Urenski

Ehud Gazit

Moshe Oron

Lihi Adler-Abramovich

Amir Handelman

Peter Beker

Daniel Aronov

David Eger

Alexander Skliar

Mordechai Katz

A porous layer is described. The porous layer comprises a solidified sol-gel inorganic material having a distribution of nanometric voids, wherein at least some of nanometric voids are at least partially coated internally by carbon or a hydrophobic substance containing carbon.

Composition and method for forming a dielectric layer

A method of fabricating a nanoshell is disclosed. The method comprises coating a nanometric core made of a first material by a second material, to form a core-shell nanostructure and applying non-chemical treatment to the core-shell nanostructure so as to at least partially remove the nanometric core, thereby fabricating a nanoshell. The disclosed nanoshell can be used in the fabrication of transistors, optical devices (such as CCD and CMOS sensors), memory devices and energy storage devices.

Nanoshell, method of fabricating same and uses thereof

A method of fabricating a device is disclosed. The method comprises coating a solid structure by nanostructures selected from the group consisting of peptides and amino acids, under conditions that at least partially prevent assembly of the nanostructures into supramolecular structures.

Electrode and method of manufacturing the same

A coating method is disclosed. The coating method comprises placing a substrate and a biomolecule in a chamber and applying a vapor deposition process within the chamber so as to form a solid deposition of the biomolecule on at least a portion of a surface of the substrate.

Vapor deposition of biomolecules

Tailoring domain engineered structures in ferroelectric materials

Scanning probe apparatus, including a tip-electrode which is coupled to be held at a substantially ground potential, a counter-electrode which is positioned in proximity to the tip-electrode, a voltage source, coupled to maintain the counter-electrode at a non-ground potential, and positioning-instrumentation, which is adapted to maintain the tip-electrode at a suitable position relative to a surface of a ferroelectric sample located in a space between the tip-electrode and the counter-electrode. The apparatus generates an electric field in the ferroelectric sample greater than a coercive field of the sample.

A method of fabricating an invertedly poled domain structure having alternating sections of opposite electric polarities, from a ferroelectric crystal wafer ( ) having two opposite polar surfaces, comprises patterning at least one of the two polar surfaces of the wafer to comprise a plurality of alternating discrete regions, of which first regions are adapted for and second regions are protected from the direct application thereto of an electric contact; applying to both polar surfaces of the wafer electrically conducting electrodes ( and ) so that the first regions are in direct contact with the electrodes and the second regions are protected from such a contact; and applying to the electrodes an electrical field ( ) of the intensity E. The electrical field is applied to the wafer at a working temperature by heater/cooler ( ).

Fabrication of an invertedly poled domain structure from a ferroelectric crystal

Growing community of inventors

Rishon-LeZion, Israel

Gil Rosenman