Skhynix Inc.

Gil-Jae Park

Ki-Seon Park

Jung-Woo Park

Kwan-Woo Do

Ga-Young Ha

An electronic device includes a semiconductor memory that includes: a variable resistance element formed over a substrate; and a carbon-containing aluminum nitride layer formed on sidewalls and in an upper portion of the variable resistance element.

Electronic device and method for fabricating the same

An electronic device including a semiconductor memory that includes: a selection element; a first plug and a second plug that are coupled with two different sides of the selection element, respectively; a variable resistance element formed over the first plug and configured to store data; and a dummy variable resistance element formed over the second plug and configured to include a conductive path coupled with the second plug.

A method for fabricating a semiconductor device includes forming a magnetic tunnel junction (MTJ) element on a substrate, forming a first capping layer along the shape of the MTJ element, forming an insulating layer on the first capping layer, forming a trench exposing a portion of the first capping layer above the MTJ element by selectively etching the insulating layer, forming a second capping layer on sidewalls of the trench, removing the exposed portion of the first capping layer using the second capping layer as an etching mask to expose an upper surface of the MTJ element, and forming a conductive layer in the trench, wherein the conductive layer contacts the upper surface of the MTJ element.

Growing community of inventors

Icheon-si, South Korea

Gil-Jae Park