U.S. Philips Corporation

Gijsbertus A Spierings

Jan Haisma

Willem Lcm Heijboer

Leo O Remeeus

Hendrik J Joormann

Evert M Kamerbeek

Franciscus J Van Der Kruis

Peter W De Haas

Eddy F Van Hove

Mareike K Klee

Gerrit Oversluizen

Lambertus Postma

Theodorus Martinus Michielsen

Wilhelm Georg Hermann

Joseph G Van Lierop

Cornelis L Adema

Poul K Larsen

Maritza G Heijman

Johan G De Bruin

Udo K Biermann

Wolfgang Brand

Johannes H Angenent

Emmanuel Papanikolau

Gary E Thomas

Hendrikus J Van Haren

Hendrik F Van Den Berg

Jan B Van Der Putten

Johannes M Busio

Frederik H In 't Veld

Denise M Krol

Mathieu J Ulenaers

A component includes a substrate layer (1) of glass or Al.sub.2 O.sub.3, an anti-reaction layer (2) or a levelling layer (2), two electrode layers (3, 5) and a dielectric layer (4) as well as such a capacitor. Manufacture a component which provides for cost-effective, surface-mountable (SMD). The anti-reaction layer (2) on the glass substrate (1) or the levelling layer (2) on the Al.sub.2 O.sub.3 -substrate (1) is made of at least one specific material. An anti-reaction layer or a levelling layer (2) of one of the above-mentioned substances or a combination of several substances, enables a dielectric layer (4) to be provided by means of which a high capacitance value is achieved.

Component comprising a capacitor

A description is given of a method of metallizing an electrically insulating plate, for example, of glass having a large number of holes. Said holes are internally provided with a metal layer and the plate is provided with metal tracks. The metal used is mainly aluminum. The aluminum is coated with a thin protective layer of chromium, cobalt, nickel, zirconium or titanium. Said protective layer makes it possible to use a photosensitve, cataphoretic lacquer for providing the metal layer with a structure. The method can very suitably be used for the manufacture of selection plates for thin electron displays.

Method of photolithographically metallizing at least the inside of holes

Method of providing a pattern of apertures and/or cavities in, for example, a glass duct plate of a plasma-addressed liquid crystal display, in which first a mechanical treatment is performed (for example, by means of powder blasting) and then a wet-chemical etching treatment is performed to render the walls of the ducts microscopically less rough so that the optical disturbance is reduced and the glass becomes clearer again.

Method of post-etching a mechanically treated substrate

A method of metallizing an electrically insulating plate, for example, of glass having a large number of holes. Said relatively small holes are internally provided with a metal layer and the plate is provided with metal tracks. The metal used is mainly aluminum. The aluminum is coated with a thin protective layer of chromium, cobalt, nickel, zirconium or titanium. Said protective layer makes it possible to use a photosensitive, cataphoretic lacquer to mask the metal layer in patterning and etching thereof. The method can very suitably be used for the manufacture of selection plates for thin electron displays.

Method of photolithographically metallizing at least the inside of holes arranged in accordance with a pattern in a plate of an electrically insulating material. A method of metallizing an electrically insulating plate, for example, of glass, having a large number of holes. Said holes are internally provided with a metal layer and the plate is provided with metal tracks. The metal used is mainly aluminium. The aluminium is coated with a thin protective layer of chromium, cobalt, nickel, zirconium or titanium. Said protective layer makes it possible to use a photosensitive, electrophoretic lacquer for providing the metal layer with a structure. The method can very suitably be used for the manufacture of selection plates for thin electron displays.

A first object, which comprises organic material, is bonded to a second object by a method whereby both objects are provided with complementary optically smooth surfaces, subsequent to which these surfaces are brought into substantial contact with one another, consequent upon which spontaneous atomic bonds are formed between atoms of the two objects. The strength of the atomic bonds thus formed can be increased by subsequently heating the region of contact of the two surfaces.

Method of bonding two objects, at least one of which comprises organic

The method of intimately joining a hard magnetic part to a soft magnetic part in the manufacture of an electrical machine comprising polishing the joining surfaces such that the surface roughness hight is about less than or equal to two nanometers and joining the parts by direct bonding.

Electrical machine and method of manufacturing the electrical machine

An electrical machine comprises a stationary first section (1) and a second section (5) which is movable relative to the stationary section. At least one of the sections comprises a soft-magnetic part (7) and a hard-magnetic part (9). A surface (7a) of the soft-magnetic part and a surface (9a) of the hard-magnetic part are fixed intimately to one another by direct bonding.

Electrical machine with directly bonded magnetic parts

A method is set forth of bonding together two bodies (1, 2), according to which a first body (1) is provided with a flat surface (5) and the second body (2) is provided with a silicon oxide layer (4) with a flat surface (6), after which a connecting layer (7) containing boron is provided on at least one of the two flat surfaces. Subsequently, the two bodies (1, 2) are pressed together at elevated temperature, so that a borosilicate glass layer is formed. According to the invention, a layer of practically pure boron is used by way of connecting layer (7). Among the advantages of this is that the composition of the borosilicate glass layer is exclusively determined by the previously chosen layer thicknesses.

Method of bonding together two bodies with silicon oxide and practically

A method of manufacturing a silicon-on-insulator semiconductor body is characterized by the steps consisting in that a carrier body is temporarily connected to a supporting body with accurately flat and parallel major surfaces and having a thickness of at least 1/8 of the largest dimension of the carrier body, in that the free major surface of the carrier body is mechanically polished to a precision of at least 1/2 .mu.m flatness, in that the carrier body is detached from the supporting body and the polished major surface is temporarily connected to the supporting body and the other major surface of the carrier body is mechanically polished to a precision of at least 1/2 .mu.m flatness and a parallelism between the major surfaces of at least 1/2 .mu.m whereupon a semiconductor body is connected through a major surface permanently to a major surface of the carrier body, in that then the semiconductor body is mechanically ground to a thickness of at least 50 .mu.m larger than the desired ultimate layer thickness and is then alternately polished tribochemically and mechanically to a thickness of about 10 .mu.m larger than the ultimately desired layer thickness, and in that there is ultimately polished tribochemically until the desired layer thickness of the semiconductor body is attained.

Method of manufacturing a silicon on insulator semiconductor

An optical device is manufactured by providing a disc-shaped body of a light-conducting material on a plane surface of a disc-shaped carrier body, grinding the light-conducting material mechanically to a thickness which exceeds the desired ultimate layer thickness by at least 50 .mu.m, subjecting the light-conducting material to alternate tribochemical and mechanical polishing treatments until a thickness is obtained which exceeds the desired ultimate layer thickness by approximately 10 .mu.m, and subsequently polishing the light-conductor body tribochemically until the desired layer thickness is obtained.

Method of manufacturing a light-conducting device

Grooves are etched in a glass substrate, using a metallic mask, after which the substrate is coated with a layer of glass having a refractive index which is higher than that of the substrate, the groove being filled completely. Excess glass is removed, the metallic mask being used as a stop layer and a protective layer being provided at the location of the filled grooves. Excess glass is removed at the location of the grooves by means of polishing so that a high accuracy as regards depth can be obtained.

Method of manufacturing a planar optical component

Method of preparing an aluminum oxide containing quartz glass activated by bivalent europium and comprising as glass matrix oxides mainly SiO.sub.2 and furthermore per mol of SiO.sub.2 up to at most 0.15 mol of at least one of the oxides, Al.sub.2 O.sub.3, B.sub.2 O.sub.3, P.sub.2 O.sub.5, ZrO.sub.2, Scf.sub.2 O.sub.3, Y.sub.2 O.sub.3, La.sub.2 O.sub.3, Gd.sub.2 O.sub.3, Lu.sub.2 O.sub.3, the alkali metal oxides and the alkaline earth metal oxides. A mixture is made of the composite oxides or of compounds which yield these oxides. The mixture comprises europium in the form of an aluminum containing compound of bivalent europium. The mixture is melted at a high temperature in a reducing atmosphere and is then cooled. The luminescent quartz glasses obtained are used in luminescent screens of, for example, low-pressure mercury vapor discharge lamps.

Method of preparing a luminescent quartz glass activated by bivalent

A new type of glass, for example for use as a TL-envelope glass which as regards phosphor poisoning and Hg penetration has better properties than the present TL-envelope glasses. Phosphor poisoning occurs in particular upon fusing electrodes and bending and severing and bridging, respectively, during the manufacture of SL and PL lamps. Phosphor poisoning is controlled by incorporating little or no Na.sub.2 O in the glass. In order to nevertheless reach good processing properties, a combination of Li.sub.2 O and K.sub.2 O is used in the glass. The addition of only Li.sub.2 O or only K.sub.2 O does not result in a suitable glass. Hg penetration is controlled by the presence of a large quantity of alkaline earth metal oxides in the glass. The glass according to the invention has a good light transmission. A lamp comprising a lamp envelope of a glass according to the invention shows only a small luminous decline during operation of the lamp.

Glass composition suitable for use in a fluorescent lamp, tube and lamp

The glass composition in accordance with the invention is characterized by the absence of alkali metal oxides and by the presence of at least 10% by weight of barium oxide. The glass composition in accordance with the invention has favorable working properties (melting temperature below 1500.degree. C., working range in excess of 200 Celsius degrees, it is very corrosion resistant (also in a strong electric field), it is resistant to metal vapors including mercury vapor, it does not attack a phosphor and it is not subject to blackening. The glass composition in accordance with the invention is extremely suitable for use in fluorescent lamps (TL-, SL- and PL-lamps) and in projection-television face plates.

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Eindhoven, Netherlands

Gijsbertus A Spierings