Asml Netherlands B.v.

Gijsbert Rispens

Marcus Adrianus Van De Kerkhof

Johannes Petrus Martinus Bernardus Vermeulen

Andrey Alexandrovich Nikipelov

Pieter-Jan Van Zwol

Paul Janssen

Mária Péter

David Ferdinand Vles

Arnoud Willem Notenboom

Egbert Lenderink

Derk Servatius Gertruda Brouns

Maxim Aleksandrovich Nasalevich

Willem Joan Van Der Zande

Matthias Kruizinga

Willem-Pieter Voorthuijzen

Aleksandar Nikolov Zdravkov

Erik Achilles Abegg

Nadja Schuh

Nirupam Banerjee

Michiel Alexander Blauw

Antonius Willem Verburg

Nicolae Maxim

Claudia Piliego

Sander Frederik Wuister

Wim Tjibbo Tel

Stefan Hunsche

Anton Bernhard Van Oosten

Alexey Olegovich Polyakov

Abraham Slachter

Brennan Peterson

Koenraad Van Ingen Schenau

Oktay Yildirim

Christianus Wilhelmus Johannes Berendsen

Daan Daniel Johannes Antonius Van Sommeren

Johan Franciscus Maria Beckers

Güneş Nakiboglu

Theodorus Johannes Antonius Renckens

Mária PÉTER

Alexandar Nikolov Zdravkov

Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.

Membrane for EUV lithography

A method including obtaining (i) measurements of a parameter of the feature, (ii) data related to a process variable of a patterning process, (iii) a functional behavior of the parameter defined as a function of the process variable based on the measurements of the parameter and the data related to the process variable, (iv) measurements of a failure rate of the feature, and (v) a probability density function of the process variable for a setting of the process variable, converting the probability density function of the process variable to a probability density function of the parameter based on a conversion function, where the conversion function is determined based on the function of the process variable, and determining a parameter limit of the parameter based on the probability density function of the parameter and the measurements of the failure rate.

Process window based on defect probability

A resist composition is disclosed which comprises a perovskite material with a structure having a chemical formula selected from ABX, ABX, or ABX, wherein A is a compound containing an NHgroup, B is a metal and X is a halide constituent. The perovskite material may comprise one or more of the following components: halogen-mixed perovskite material; metal-mixed perovskite material, and organic ligand mixed perovskite material.

Lithographic patterning process and resists to use therein

A method of processing a substrate includes: providing a substrate with a layer of photosensitive material on a surface of the substrate; and removing at least part of the photosensitive material from around an outer edge of the layer of photosensitive material so as to generate an edge, having a radial width, around the layer of photosensitive material remaining on the surface of the substrate, wherein the photosensitive material varies in thickness forming a thickness profile across the radial width and the removing is controlled so as to generate variation in the thickness profile along the length of the edge, and/or wherein the removing is controlled so as to generate a rough edge around the layer of photosensitive material remaining on the surface of the substrate.

Method for removing photosensitive material on a substrate

A resist composition is disclosed which comprises a perovskite material with a structure having a chemical formula selected from ABX, ABX, or ABX, wherein A is a compound containing an NHgroup, B is a metal and X is a halide constituent. The perovskite material may comprise one or more of the following components: halogen-mixed perovskite material; metal-mixed perovskite material, and organic ligand mixed perovsikte material.

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Eersel, Netherlands

Gijsbert Rispens