Samsung Electronics Co., Ltd.

Gibum Kim

Dongwon Kim

Donggun Lee

Joosung Kim

Jonguk Seo

Jungsoo Jung

Juhyun Kim

Keun Hwi Cho

Myung Gil Kang

Tan Sakong

Donghun Lee

Myunggil Kang

Kwonjong Lee

Keunhwi Cho

Sangwon Jung

Youngjo Tak

Sundo Kim

The disclosure relates to a 5th-generation (5G) or 6th-generation (6G) communication system for supporting a higher data transmission rate. A method performed by a first user equipment (UE) in a wireless communication system in which cross-link interference (CLI) exists is provided. The method includes receiving, from a base station, control information related to automatic gain control (AGC) tuning and CLI measurement, receiving, from a second UE, a first signal for the AGC tuning based on the control information, controlling an input signal level of an analog-to-digital converter (ADC) in the first UE based on the first signal, receiving, from the second UE, a second signal for the CLI measurement based on the control information, and transmitting, to the base station, a report message including a CLI measurement result measured based on the second signal.

Communication method and device in wireless communication system having cross-link interference

A semiconductor device includes an active region on a substrate, source/drain patterns on the active region, channel patterns on the active region and connected to the source/drain patterns, each of the channel patterns including a plurality of semiconductor patterns, which are vertically stacked to be spaced apart from each other, gate electrodes, which are respectively on the channel patterns and are extended in a first direction and parallel to each other, and active contacts, which are electrically and respectively connected to the source/drain patterns. A bottom surface of a first active contact is located at a first level, and a bottom surface of a second active contact is located at a second level higher than the first level. A bottom surface of a third active contact is located at a third level higher than the second level.

Semiconductor device including source/drain patterns

A semiconductor device includes a substrate, an active fin on the substrate, and a transistor on the active fin. The transistor includes a lower channel layer, an intermediate channel layer, and an upper channel layer sequentially stacked, and a gate structure traversing the active fin, respectively surrounding the channel layers, and including a gate dielectric and a gate electrode. The gate electrode includes a lower electrode portion between the active fin and the lower channel layer, an intermediate electrode portion between the lower channel layer and the intermediate channel layer, and an upper electrode portion between the intermediate channel layer and the upper channel layer. The gate electrode includes a work function adjusting metal element, and a content of the work function adjusting metal element in the lower electrode portion is different from that in each of the intermediate electrode portion and the upper electrode portion.

Semiconductor device including plurality of channel layers

A semiconductor light emitting device includes a light emitting structure in the form of a rod, including a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, and having a first surface, a second surface opposing the first surface, and a side surface connecting the first and second surfaces; a regrowth semiconductor layer surrounding an entire side surface of the light emitting structure and having a first thickness in a first position along a perimeter of the side surface and a second thickness, different from the first thickness, in a second position along a perimeter of the side surface; a first electrode on the first surface of the light emitting structure and connected to the first conductivity-type semiconductor layer; and a second electrode on the second surface of the light emitting structure and connected to the second conductivity-type semiconductor layer.

Semiconductor light emitting device and display apparatus

A semiconductor light-emitting device includes a plurality of light-emitting device structures separated from each other, each of the plurality of light-emitting device structures including a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, a second conductivity type semiconductor layer on the active layer, a first electrode connected to the first conductivity type semiconductor layer, and a second electrode connected to the second conductivity type semiconductor layer, and a partition wall structure between two adjacent light-emitting device structures of the plurality of light-emitting device structures, the partition wall structure defining a pixel space.

Semiconductor light-emitting device and method of fabricating the same

Growing community of inventors

Yongin-si, South Korea

Gibum Kim