Micron Technology Incorporated

Intel Corporation

Ovonyx Inc.

Carlow Innovations LLC

Ovonyx Memory Technology, LLC

Gianpaolo Spadini

Derchang Kau

Jong-Won Sean Lee

Jong Won Lee

Tyler A Lowrey

Ilya V Karpov

Sergey A Kostylev

Semyon D Savransky

George A Gordon

James Reed

Elijah V Karpov

Stephen W Russell

Ward D Parkinson

Fabio Pellizzer

Innocenzo Tortorelli

Ward M Parkinson

Christina Papagianni

Johannes A Kalb

Charles C Kuo

Yudong Kim

Kuo-Wei Chang

Subject matter disclosed herein relates to a memory device, and more particularly to a self-aligned cross-point phase change memory-switch array and methods of fabricating same.

Self-aligned cross-point phase change memory-switch array

Some embodiments include apparatuses and methods having a memory cell, first and second conductive lines configured to access the memory cell, and a switch configured to apply a signal to one of the first and second conductive lines. In at least one of such embodiments, the switch can include a phase change material. Other embodiments including additional apparatuses and methods are described.

Apparatuses and methods including memory access in cross point memory

Methods of forming memory cells comprising phase change and/or chalcogenide materials are disclosed. In one aspect, the method includes providing a lower line stack extending in a first direction, the lower line stack comprising a sacrificial line over a lower conductive line. The method further includes forming a chalcogenide line extending in the first direction by selectively removing the sacrificial material of the sacrificial line and replacing the sacrificial line with a chalcogenide material.

Replacement materials processes for forming cross point memory

Some embodiments include apparatuses and methods having a memory cell, first and second conductive lines configured to access the memory cell, and a switch configured to apply a signal to one of the first and second conductive lines. In at least one of such embodiments. the switch can include a phase change material. Other embodiments including additional apparatuses and methods are described.

Material test structures having cantilever portions and methods of forming the same are described herein. As an example, a method of forming a material test structure includes forming a number of electrode portions in a first dielectric material, forming a second dielectric material on the first dielectric material, wherein the second dielectric material includes a first cantilever portion and a second cantilever portion, and forming a test material on the number of electrode portions, the first dielectric material, and the second dielectric material.

Material test structure

Disturb from the reset to the set state may be reduced by creating an amorphous phase that is substantially free of crystal nuclei when programming the reset state in a phase change memory. In some embodiments, this can be achieved by using a current or a voltage to program that exceeds the threshold voltage of the phase change memory element, but does not exceed a safe current voltage which would cause a disturb.

Immunity of phase change material to disturb in the amorphous phase

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Los Gatos, CA, United States of America

Gianpaolo Spadini