Hitachi Energy Ltd

Hitachi Energy Switzerland Ag

Gianpaolo Romano

Florin Udrea

Lars Knoll

Marco Bellini

Stephan Wirths

Andrei Mihaila

Giovanni Alfieri

Nazareno Donato

Moritz Wehrle

Sami Bolat

Nadja Klipfel

A power semiconductor device and method for production thereof is specified involving an electrode, a base layer of a first conductivity type provided on the electrode, at least one contact layer provided on the base layer, a gate contact provided on the base layer and on the at least one contact layer, an insulation layer between the gate contact and the base layer and between the at least one contact layer and the gate contact, and at least one zone of a second conductivity type within the base layer, wherein the at least one zone is constructed and arranged to shift away a peak electric field generated in the base layer from the insulation layer between the gate contact and the base layer.

Power semiconductor device and a method for producing a power semiconductor device

A power semiconductor device () comprising a semiconductor body () extending in a vertical direction between a first main surface () and a second main surface (), a trench () extending from the first main surface () into the semiconductor body () in the vertical direction, and an insulated trench gate electrode () that is formed on the first main surface () and extends into the trench () is specified, wherein the trench () is subdivided along a main extension direction of the trench () in a plurality of segments () and the insulated trench gate electrode () continuously extends over the plurality of segments ().

Power semiconductor device with an insulated trench gate electrode

A method for producing a power semiconductor device comprises providing a semiconductor body based on SiC, irradiating at least a first portion of a top side of the semiconductor body with low-energy electron radiation, and producing an electrical insulation layer at least in the at least one irradiated first portion.

Manufacturing method for power semiconductor device using low-energy electron radiation to produce silicon-enriched layer

Growing community of inventors

Baden, Switzerland

Gianpaolo Romano