E.t.c. Epitaxial Technology Center Srl

Gianluca Valente

Franco Preti

Danilo Crippa

Giacomo Nicolao Maccalli

Olle Kordina

Natale Speciale

Vittorio Pozzetti

Speciale Natale

The present invention relates to a susceptor system for an apparatus of the type adapted to treat substrates and/or wafers; the susceptor system is provided with a cavity () which acts as a chamber for the treatment of the substrates and/or wafers and which extends in a longitudinal direction and is delimited by an upper wall (), by a lower wall (), by a right-hand side wall (), and by a left-hand side wall (); the upper wall () is constituted by at least one piece of electrically conducting material suitable for being heated by electromagnetic induction; the lower wall () is constituted by at least one piece of electrically conducting material suitable for being heated by electromagnetic induction; the right-hand side wall () is constituted by at least one piece of inert, refractory and electrically insulating material; the left-hand side wall () is constituted by at least one piece of inert, refractory and electrically insulating material; the piece of the upper wall () is thus electrically well insulated from the piece of the lower wall ().

Susceptor system

The present invention relates to a susceptor system for an apparatus for the treatment of substrates and/or wafers, provided with a treatment chamber () delimited by at least two walls and with at least one heating solenoid (); the susceptor system comprises at least one susceptor element () delimited by an outer surface and made of electrically conducting material suitable for being heated by electromagnetic induction; the susceptor element () is hollow; a first portion of the outer surface of the susceptor element () is suitable for acting as a wall of the treatment chamber (); a second portion of the outer surface of the susceptor element () is suitable for being disposed close to the heating solenoid ().

A system for an apparatus of the type adapted to treat substrates and/or wafers is described and comprises a stationary base element and a movable support for at least one substrate or at least one wafer, the support being rotatable above the element about a stationary axis; a chamber, and at least one duct is provided for the admission of at least one gas-flow to the chamber in order to raise the support; the system also comprises means for converting the flow of gas into the chamber into rotation of the support.

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Milan, Italy

Gianluca Valente