E.t.c. S.r.l.

Flexterra, Inc.

Gianluca Generali

Michele Muccini

Raffaella Capelli

Stefano Toffanin

Antonio Facchetti

Valentina Benfenati

Roberto Zamboni

Chung-Chin Hsiao

Hakan Usta

Mitchell Denti

Andrea Stefani

Viviana Biondo

Ricardo D'Alpaos

Hugh Lien

Xiaoyan Chen

Guido Turatti

Riccardo D'ALPAOS

The present teachings relate to an organic electroluminescent transistor with improved light-emission characteristics. More specifically, the present organic electroluminescent transistor has an emissive ambipolar channel including at least one layer of an n-type semiconductor material, at least one layer of a p-type semiconductor material, and at least one layer of an emissive material arranged between the layers of the p-type and n-type semiconductor materials, where the multilayer emissive ambipolar channel includes, among various layers, a layer of a p-type semiconductor material comprising a benzothieno-benzothiophene compound, and/or a layer of an emissive material comprising a blend material that includes an organic carbazole derivative as the host matrix compound and an iridium complex as the guest emitter.

Organic electroluminescent transistor

The invention relates to improved Organic Light Emitting Transistor (OLET) pixel architecture for OLET based displays.

Display containing improved pixel architectures

An organic ambipolar light emitting field effect transistor having an architecture with layers stacked one over the other, adapted to generate a diffused illumination is described. The transistor has a gate electrode, a dielectric layer superposed to the gate electrode, an ambipolar channel superposed to the dielectric layer having a P-type semiconductor layer whose energy band is determined by its highest occupied molecular orbital HOMO-SCand lowest unoccupied molecular orbital LUMO-SC, a N-type semiconductor layer whose energy band is determined by its highest occupied molecular orbital HOMO-SCand lowest unoccupied molecular orbital LUMO-SCand a light emitting layer adapted to allow recombination of charge carriers of opposite sign, interposed between the P-type semiconductor layer and the N-type semiconductor layer, whose energy band is determined by its highest occupied molecular orbital HOMO-R and lowest unoccupied molecular orbital LUMO-R, respectively; a source electrode adapted to inject charges of a first type and a drain electrode adapted to inject charges of a second type, said source electrode and drain electrode being in contract with a same layer of said P-type or N-type semiconductor layers, the other of said semiconductor layers being in contact with the dielectric layer.

Organic light emitting ambipolar field effect transistor with distributed light emission

The present invention relates to a device comprising an organic field effect transistor (OFET) with charge injecting contacts containing a semiconductor layer formed by a perylene derivative, to uses of said device as a medical sensor and/or as a medical cell stimulator and to methods of stimulating and/or monitoring biological cellular activity by using said device.

Platform comprising an organic field-effect transistor for biological and medical applications

Growing community of inventors

Bologna, Italy

Gianluca Generali