Avago Technologies General IP (singapore) Pte. Ltd.

Prima Electro S.p.a.

Giancarlo Meneghini

Roberto Paoletti

Ruiyu Fang

Giammarco Rossi

Alessandro Stano

Giuliana Morello

Claudio Coriasso

Pietro Della Casa

Paola-Ida Gotta

A method for making a laser diode with a distributed grating reflector (RT) in a planar section of a semiconductor laser with stabilized wavelength includes providing a diode formed by a substrate (S), a first cladding layer (CL) arranged on the substrate (S), an active layer (A) arranged on the first cladding layer (CL) and adapted to emit a radiation, and a second cladding layer (CL) arranged on the active layer (A), said cladding layers (CL, CL) being adapted to form a heterojunction to allow for efficient injection of current into the active layer (A) and optical confinement, and a contact layer. The manufacturing method provides for creating, on a first portion (ZA) of the device, a waveguide (GO) for confinement of the optical radiation and, on the remaining portion (ZP) of the device, two different gratings for light reflection and confinement. The two gratings define two different zones (R, R), wherein the first zone (R) includes a grating of low order and high duty cycle, and is intended for reflection, and the second zone (R) includes a grating of the same order, or a grating of a higher order than the previous one, and low duty cycle, and is mainly intended for light confinement. The waveguide (GO) for confining the optical radiation is implemented through a lithography and a subsequent etching, whereas the grating (RT) requires a high-resolution lithography and a shallow etching starting from a planar zone.

Method for making a semiconductor laser diode, and laser diode

An edge-emitting optical semiconductor structure has a substrate, an active multiple quantum well (MQW) region formed on the substrate, and a ridge waveguide extending between first and second etched end facets. The first etched end facet is disposed in a first window, while the second etched end facet is disposed in a second window. The first etched end facet extends between a pair of alcoves in the first window, and the second etched end facet extends between a pair of alcoves in the second window. An integrated device in which two such structures are provided has an H-shaped window where the two structures adjoin each other. The structure can be fabricated using a process that involves a first mask to form the ridge waveguide and then a second mask and an etching process to form the windows.

Semiconductor lasers and etched-facet integrated devices having H-shaped windows

An edge-emitting etched-facet optical semiconductor structure has a substrate, an active multiple quantum well (MQW) region formed on the substrate, and a ridge waveguide formed over the MQW region extending in substantially a longitudinal direction between a waveguide first etched end facet and a waveguide second etched end facet. A mask layer used to form windows in which the etched end facets are disposed consists of a single dielectric material disposed directly on the ridge waveguide. An optical coating consisting of no more than one layer of the same dielectric material of which the second mask is made is disposed directly on the second mask and disposed directly on the windows to coat the etched end facets.

Etched-facet lasers having windows with single-layer optical coatings

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Turin, Italy

Giancarlo Meneghini