Micron Technology Incorporated

Other

Stmicroelectronics S.r.l.

Politecnico Di Milano

Gian Pietro Vanalli

Giovanni Campardo

Pier Paolo Stoppino

Stefano Corno

Paolo Pulici

Danilo Caraccio

Federico Tiziani

Andrea Ghilardelli

Aldo Losavio

Manuela Scognamiglio

Massimiliano Magni

Angelo Visconti

Silvia Beltrami

Michele Bartolini

Alexey Petrushin

Roberto Dossi

Giancarlo Ripamonti

Tito Lessio

A memory controller can provide current to a heater in a flash memory to reduce cycling induced errors. If necessary, after heating, the memory may be refreshed. In non-battery powered systems, data may be removed from the memory prior to heating and restored to the memory after heating.

Thermal treatment of flash memories

A system and method are disclosed in which a first non-volatile memory includes blocks that store data, and a second memory that stores error correction information related to the blocks storing the data. The first memory and the second memory are of different types.

Secondary memory to store error correction information

A substrate has a first surface and a second surface opposed to each other. A blind hole is formed in the substrate extending from the first surface at a location for each through via. Each blind hole is filled with a conductive filler; a deepest part of each filler forming a bump portion made of a solder material. Part of the substrate extending from the second surface is removed to have at least the bump portions protrude from the substrate. The non-protruding part of each filler defines the corresponding via and the bump portion defines the corresponding solder bump.

Through via structure including a conductive portion and aligned solder portion

A method and system are disclosed in which a first non-volatile memory includes blocks that store data, and a second memory that stores overhead information related to the blocks storing the data. The amount of the second memory storing the overhead information related to the at least one block of the plurality of blocks is varied.

Secondary memory to store a varying amount of overhead information

A method for manufacturing solder bumps for through vias in a substrate having a first surface and a second surface opposed to each other. The method includes the steps of forming a blind hole extending in the substrate from the first surface for each via and filling each blind hole with a conductive filler; a deepest part of each filler includes a bump portion made of a solder material. The method further includes the step of removing a part of the substrate extending from the second surface to have at least the bump portions protrude from the substrate. The non-protruding part of each filler defines the corresponding via and the bump portion defines the corresponding bump.

Method for forming bumps in substrates with through vias

Embodiments for providing improved reliability or extended life for a non-volatile memory component may comprise a secondary non-volatile memory component to store error correction information, for example.

Secondary memory element for non-volatile memory

An output buffer includes at least a first and a second stage, wherein each stage is formed by respective first transistors and second transistors coupled in series with each other between a first and a second voltage reference. The coupled first and second transistors have a common conduction terminal connected to an output terminal of the output buffer. An input terminal of the buffer is connected to control terminals of the transistors of the first stage through a first open loop driving circuit. A second feedback driving circuit is connected between the input terminal and the control terminals of the transistors of the second stage. The second feedback driving circuit includes a current detector operating to detect a maximum in the value of the current drawn by and supplied to the output buffer. A comparison block, having a threshold value, detects current in excess of the threshold value and processes information coming from the current detector to regulate an output impedance value of the output buffer. The current detector includes a duplicated structure which replicates a portion of the buffer circuit without altering the performances of the buffer itself.

Output buffer

An integrated electronic device includes at least one supply pin and at least one booster coupled to said at least one supply pin. Moreover, there is at least one integrated circuit powered by the at least one booster and associated therewith in a 'system in a package configuration.'

Growing community of inventors

S. Bartolomeo, Italy

Gian Pietro Vanalli