Nxp B.v.

Koninklijke Philips Corporation N.v.

St-Ericsson Sa

Gian Hoogzaad

Frans Pansier

Thomas Duerbaum

Markus Schmid

Johann Baptist Daniel Kuebrich

Jozef Reinerus Maria Bergervoet

Peter Laro

Alexander Simin

Hans Halberstadt

Tony Vanhoucke

Mark Pieter Van Der Heijden

Radu Surdeanu

Peter Hubertus Franciscus Deurenberg

Gerben Willem De Jong

Raf Lodewijk Jan Roovers

Wilhelmus H M Langeslag

Hendrik Van Der Ploeg

Amin Hamidian

Eise Carel Dijkmans

Peter Deixler

Georg Sauerländer

Viet Nguyen Hoang

Pascal Bancken

Benoit Bataillou

Maarten Vertregt

Klaas-Jan De Langen

Gert-Jan Koolen

Robert Henrikus Margaretha Van Veldhoven

Serge Bardy

Cheng Zhang

Franciscus A C M Schoofs

Olivier Crand

Ivan Mitkov Zahariev

Joop Van Bijnen

Hans Paul Tuinhout

Denizhan Karaca

Guillaume Lebailly

Robert Victor Buytenhuijs

Antonius M G Mobers

Hans Schmitz

Jozef Bergervoet

Ivan Matkov Zahariev

Marc Gerardus Maria Stegers

Fanfan Meng

Hasan Gui

Peter Deurenberg

A protection circuit and method for protecting driven circuitry against voltage peaks in a radio frequency signal, 'V', past a predetermined voltage level “V”. The protection circuit includes an input for receiving the radio frequency signal. The protection circuit also includes at least one amplification stage coupled to the input. The amplification stage is operable to produce an amplified signal based on V−V. The protection circuit further includes a hold circuit operable to determine, from the amplified signal produced by the amplification stage, whether a peak voltage Vof the radio frequency signal exceeds V. The hold circuit is operable to output a first detection value if Vexceeds V. The hold circuit is operable to output a second detection value if Vdoes not exceed V. The protection circuit also includes a latch circuit operable to latch the detection value outputted by the hold circuit.

Protection circuit and method

An attenuator arrangement comprising at least a first attenuation path configured to couple between a signal processing chain, SPC, and a measurement apparatus; said SPC comprising a first and second SPC terminal, said SPC configured to apply one or both of a gain and phase change on a signal passed between the SPC terminals; said measurement apparatus configured to measure one or both of the gain and the phase change applied by SPC by coupling to and receiving signals from said SPC terminals; wherein one of said first SPC terminal and said second SPC terminal is coupled to the measurement apparatus through said first attenuation path; and wherein the at least first attenuation path of the attenuator arrangement is configured to provide, selectively, for attenuation of the signal to the measurement apparatus to make the signal power of the signals from said SPC terminals more equal.

Attenuator arrangement

An antenna switch circuit and an antenna circuit switching method. The circuit includes an antenna port, a termination port (e.g., for disposal of power reflected back from an antenna and received through the antenna port in a transmit mode), and a receive port (e.g., for receiving a signal from the antenna port via the antenna switch circuit in a receive mode). The circuit also includes a first switch coupled between the antenna port and the termination port. The circuit further includes a resonant inductance coupled between the receive port and the node located between the antenna port and the first switch. The circuit also includes a second switch coupled between a reference potential and a node located between the resonant inductance and the receive port.

Antenna switch circuit and method

An RF amplifier for implementation in SiGe HBT technology is described. The RF amplifier has a cascode stage comprising a common base (CB) transistor and a common emitter (CE) transistor arranged in series between a first voltage rail and a second voltage rail. An RF input is coupled to the base of the CE transistor and an RF output is coupled to the collector of the CB transistor. The RF amplifier includes a CB power-down circuit arranged between the base of the CB transistor and the second voltage rail and a CE power-down circuit arranged between the base of the CE transistor and the second voltage rail. In a power-down mode the CE power-down circuit couples the base of the common-emitter-transistor to the second voltage rail. The CB power-down mode circuit couples the base of the CB transistor to the second voltage rail via a high-ohmic path.

RF amplifier

A RF switching arrangement () is described including a bias swap circuit (). The bias swap circuit switches the bias voltage dependent on the state of the RF switch. This improves the performance of the RF switch without requiring charge pump circuitry.

RF switch circuit

An RF switch for connecting an antenna to a transceiver is described. The RF switch includes a first switchable capacitor arranged between a first terminal and a common terminal and a second switchable capacitor arranged between a second terminal and the common terminal. Each of the first and second switchable capacitors are switchable between a pass state and a blocking state. The capacitance value in the pass state is higher than the capacitance value in the blocking state.

RF switch

A matching circuit comprising: an input-terminal configured to be connected to an active-circuit; an output-terminal configured to be connected to a downstream component; a current-source configured to provide a disabled-current; one or more diode-modules, each comprising a diode and a biasing-resistor in parallel with each other; and a reactive-matching-component that has a reactive impedance. The current source is configured to pass the disabled-current through the one or more diode-modules and the reactive-matching-component when the matching circuit is in a disabled-mode of operation such that they contribute to the impedance of the matching circuit between the input-terminal and the output-terminal.

Matching circuit

A power supply ready indicator circuit is described. The power supply ready indicator circuit includes a first power-supply-ready-input interfacing with a first power supply rail; a second power-supply-ready-input interfacing with a second power supply rail; and a power ready indicator output. The power supply ready indicator circuit is configured to divide the voltage on the first power supply rail, and to compare the divided voltage with the second power supply rail voltage. The power supply ready indicator circuit generates a power ready signal on the power ready indicator output in response to the divided voltage value being greater than the second power supply rail voltage value. The final value of the first power supply rail voltage is greater than the final value of the second power supply rail voltage.

Power supply ready indicator circuit

A flip chip circuit comprising: a semiconductor substrate; a power amplifier provided on the semiconductor substrate; and a metal pad configured to receive an electrically conductive bump for connecting the flip chip to external circuitry. At least a portion of the power amplifier is positioned directly between the metal pad and the semiconductor substrate.

Flip chip circuit

A biased-transistor-module comprising: a module-input-terminal; a module-output-terminal; a reference-terminal; a module-supply-terminal configured to receive a supply voltage; a module-reference-voltage-terminal configured to receive a module reference voltage; a main-transistor having a main-control-terminal, a main-first-conduction-channel-terminal and a main-second-conduction-channel-terminal, wherein the main-first-conduction-channel-terminal is connected to the module-output-terminal, and the main-second-conduction-channel-terminal is connected to the reference-terminal, and the main-control-terminal is connected to an input-signal-node, wherein the input-signal-node is connected to the module-input-terminal; and a bias-circuit. The bias-circuit comprises: a first-bias-transistor; a first-bias-resistor; a second-bias-transistor; and a second-bias-resistor.

Biased transistor module

A Doherty amplifier circuit comprising: a splitter having: a splitter-input-terminal for receiving an input signal; a main-splitter-output-terminal; and a peaking-splitter-output-terminal; a main-power-amplifier having a main-power-input-terminal and a main-power-output-terminal, wherein; the main-power-input-terminal is connected to the main-splitter-output-terminal; and the main-power-output-terminal is configured to provide a main-power-amplifier-output-signal; a peaking-power-amplifier having a peaking-power-input-terminal and a peaking-power-output-terminal, wherein: the peaking-power-input-terminal is connected to the peaking-splitter-output-terminal; and the peaking-power-output-terminal is configured to provide a peaking-power-amplifier-output-signal. The splitter, the main-power-amplifier and the peaking-power-amplifier are provided by means of an integrated circuit.

Doherty amplifier circuits

An RF amplifier comprising an input-transistor having an input-transistor-base terminal, an input-transistor-collector terminal and an input-transistor-emitter terminal; a degeneration-component connected between the input-transistor-emitter terminal and a ground terminal; and a protection-transistor having a protection-transistor-base terminal, a protection-transistor-collector terminal and a protection-transistor-emitter terminal. The input-transistor-base terminal is connected to the protection-transistor-emitter terminal, and the protection-transistor-base terminal is connected to the input-transistor-emitter.

A two-stage RF amplifier is provided. The first stage is a common-emitter transistor arrangement with a purely reactive degeneration impedance and an output impedance with a reactive component matched in frequency response to the degeneration impedance. The second stage is a buffer amplifier. The first amplifier can be designed for high gain which is flat over frequency by virtue of the reactive degeneration impedance. The first amplifier provides input matching, and the buffer provides output matching, with decoupling between the input and output.

A method is disclosed of controlling a switched mode converter comprising a switch and for providing power to device having a load, comprising: in response to the load exceeding a first threshold, operating in a first mode, being a CCM; in response to the load exceeding a second threshold and not exceeding the first threshold, operating in second mode, being a BCM without valley skipping wherein the switching frequency increases with decreasing load; in response to the load exceeding a third threshold and not exceeding the second threshold, operating in a third mode, being a BCM with valley skipping, wherein the switching frequency depends on the load and the number of valleys skipped and is between a fixed upper and a lower switching frequency limit; and in response to the load not exceeding the third threshold, operating in a fourth mode, being a BCM with valley skipping, wherein the switching frequency depends on at least the load, and is between an upper and a lower switching frequency limit wherein the upper switching frequency limit decreases with decreasing load. A switched mode converter controlled by such a method is also disclosed.

Switched mode converter and methods of controlling switched mode converters

The present invention relates to an electronic device for driving a light emitting diode, which includes a switch (Ts) being adapted to switch a switch-mode power converter, and controlling means (CNTL) being adapted for controlling the switch (Ts) in response to a sensing value (Vs) indicative of a current of the switch-mode power converter and for controlling by the switch (Ts) the output voltage of the switched power converter and a current (Iout) through the light emitting diode.

Electronic device for driving light emitting diodes

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Mook, Netherlands

Gian Hoogzaad