Genus, Inc.

Aixtron Se

Aixtron, Inc.

Eugenus, Inc.

Gi Youl Kim

Sasangan Ramanathan

David Keating Foote

Thomas E Seidel

Brian Lu

Ana Rangelova Londergan

Hugo Silva

Ken Doering

Woong Park

Young Jin Jang

Greg Siu

Anuranjan Srivastava

Mike Kubani

There is disclosed a method for forming a TiSiN thin film on a substrate according to ALD including a first process of preheating a substrate while supplying Ar or Ncontaining inert gas to a chamber, after disposing a substrate in a chamber; a second process of forming a TiN film on the substrate by repeating at least one time a process of purging over-supplied Ti containing gas after supplying Ti containing gas and inert gas after that and a process of purging residual product after supplying N containing gas and inert gas after that; a third process of forming a SiN film by repeating at least one time a process of purging over-supplied Si containing gas after supplying Si containing gas on the TiN film and supplying inert gas after that and a process of purging residual product after supplying N containing gas and supplying inert gas after that; and a fourth process of forming a TiSiN film having a desired thickness by repeating the second and third processes at least one time, a partial pressure range of the gas used in forming the TiSiN thin film is Ti containing gas: 9&#xd7;10Torr or less, Si containing gas: 1&#xd7;10&#x2dc;3&#xd7;10Torr and N containing gas: 7&#xd7;10&#x2dc;6&#xd7;10Torr, and a pressure range of the gas is 500 mTorr&#x2dc;5 Torr and the Si content of the formed TiSiN thin film is 20 atom % or less.

Method for forming TiSiN thin film layer by using atomic layer deposition

A process in which a wafer is exposed to a first chemically reactive precursor dose insufficient to result in a maximum saturated ALD deposition rate on the wafer, and then to a second chemically reactive precursor dose, the precursors being distributed in a manner so as to provide substantially uniform film deposition. The second chemically reactive precursor dose may likewise be insufficient to result in a maximum saturated ALD deposition rate on the wafer or, alternatively, sufficient to result in a starved saturating deposition on the wafer. The process may or may not include purges between the precursor exposures, or between one set of exposures and not another.

Transient enhanced atomic layer deposition

A heater assembly for an ALD or CVD reactor provides protection for an electrical conductor associated with a heating element by using a purge gas to isolate the conductor from the corrosive environment of the reactor chamber. The purge gas is introduced into a sleeve surrounding the conductor and from there is allowed to leak into the reactor chamber to be pumped out with the process gasses. This arrangement avoids the need for airtight seals at the junction of the sleeve and the heating element easing manufacturing requirements and potentially reducing component costs.

Purged heater-susceptor for an ALD/CVD reactor

Growing community of inventors

San Jose, CA, United States of America

Gi Youl Kim