Samsung Display Co., Ltd.

Dongwoo Fine-chem Co., Ltd.

Gi-Yong Nam

Youngmin Kim

Hong-Sick Park

Jong-Hyun Choung

Young-Chul Park

In-Bae Kim

Jonghee Park

In-Ho Yu

Suck-Jun Lee

Young-Jin Yoon

Hyoung Sik Kim

Donghun Lee

Jinhyung Kim

O Byoung Kwon

Suck Jun Lee

Dongmin Jang

Kyungchan Min

In-Seol Kuk

Seon-Il Kim

Kyu-Hun Lim

Jae-Woo Jeong

Kyu-hun Lim

An etching composition for a silver-containing thin film, the etching composition comprising an inorganic acid compound, a sulfonic acid compound, an organic acid compound, a nitrate, a metal oxidizing agent, an amino acid compound, and water.

Etching composition for thin film containing silver, method for forming pattern and method for manufacturing a display device using the same

An etchant composition is provided comprising a persulfate from 0.5 to 20 wt %; a fluoride compound from 0.01 to 2 wt %; an inorganic acid from 1 to 10 wt %; a N (nitrogen atom)-containing heterocyclic compound from 0.5 to 5 wt %; a chloride compound from 0.1 to 5 wt %; a copper salt from 0.05 to 3 wt %; an organic acid or an organic acid salt from 0.1 to 10 wt %; an electron-donating compound from at 0.1 to 5 wt %; and a solvent of the residual amount. Also provided is a method of manufacturing a display device by using the same.

Etchant and method of manufacturing display device by using the same

An etchant composition includes about 0.5 weight % to about 20 weight % of persulfate, about 0.01 weight % to about 2 weight % of a fluoride compound, about 1 weight % to about 10 weight % of an inorganic acid, about 0.5 weight % to about 5 weight % of a cyclic amine compound, about 0.1 weight % to about 10.0 weight % of a compound having an amino group and a sulfonic acid, about 0.1 weight % to about 15.0 weight % of an organic acid or a salt thereof, and water to 100 weight % of the etchant composition.

Etchant composition and method of manufacturing metal wiring and thin film transistor substrate using the etchant

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Iksan, South Korea

Gi-Yong Nam