Samsung Electronics Co., Ltd.

Gi Yong Chung

Tae Hun Kim

Jee Hoon Han

Kwang Young Jung

Joo-Heon Kang

Doo Hee Hwang

Jae Ryong Sim

Dong Seog Eun

Young-Jin Kwon

Ho Jin Kim

A semiconductor memory device includes a third insulating pattern and a first insulating pattern on a substrate, the third insulating pattern and the first insulating pattern being spaced apart from each other in a first direction that is perpendicular to the substrate such that a bottom surface of the third insulating pattern and a top surface of the first insulating pattern face each other, a gate electrode between the bottom surface of the third insulating pattern and the top surface of the first insulating pattern, and including a first side extending between the bottom surface of the third insulating pattern and the top surface of the first insulating pattern, and a second insulating pattern that protrudes from the first side of the gate electrode by a second width in a second direction, the second direction being different from the first direction.

Method of fabricating semiconductor device

A nonvolatile memory device includes a substrate including a cell array region, a first gate electrode including an opening on the cell array region of the substrate, a plurality of second gate electrodes stacked above the first gate electrode and including convex portions having an outward curve extending toward the substrate, and a word line cutting region cutting the opening and the convex portions.

Nonvolatile memory device

Semiconductor memory device and method for fabricating the same

Growing community of inventors

Seoul, South Korea

Gi Yong Chung