Samsung Electronics Co., Ltd.

Gi-Vin Im

In-Sung Park

Jae-Hyun Yeo

Young-sun Kim

Sung-Tae Kim

Ki-Yeon Park

Yun-Jung Lee

Disclosed are methods of forming dielectric materials using atomic layer deposition (ALD) and methods of forming dielectric layers from such materials on a semiconductor device. The ALD process utilizes a first reactant containing at least one alkoxide group that is chemisorbed onto a surface of a substrate and then reacted with an activated oxidant that contains no hydroxyl group to form a dielectric material exhibiting excellent step coverage and improved leakage current characteristics.

Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same

In a method of forming an oxide layer using an atomic layer deposition and a method of forming a capacitor of a semiconductor device using the same, a precursor including an amino functional group is introduced onto a substrate to chemisorb a portion of the precursor on the substrate. Then, the non-chemisorbed precursor is removed. Thereafter, an oxidant is introduced onto the substrate to chemically react the chemisorbed precursor with the oxidant to form an oxide layer on the substrate. A deposition rate is fast and an oxide layer having a good deposition characteristic may be obtained. Also, a thin oxide film having a good step coverage and a decreased pattern loading rate can be formed.

Method of forming oxide layer using atomic layer deposition method and method of forming capacitor of semiconductor device using the same

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Suwon, South Korea

Gi-Vin Im