Samsung Electronics Co., Ltd.

Gi-Sung Yoon

Sung-Hyuck Kim

Hee-bom Kim

In-Kyun Shin

Sang-Yong Yu

Sun-Young Choi

The method of forming a pattern includes forming a first photosensitive layer pattern including a first pattern in a first region of a substrate and a second pattern in a second region of the substrate, by performing a first photolithography process using a photomask having a first mask region and a second mask region. The first pattern is transferred from the first mask region, and the second pattern is transferred from the second mask region. The method further includes forming a second photosensitive layer pattern including a third pattern in the second region of the substrate and a fourth pattern in the first region of the substrate, by performing a second photolithography process using the photomask. The third pattern is transferred from the first mask region, and the fourth pattern is transferred from the second mask region.

Photomasks, methods of exposing a substrate to light, methods of forming a pattern, and methods of manufacturing a semiconductor device

In an attenuated phase-shift mask (PSM) and a method of forming the same, a phase-shift layer and a light-shielding layer are sequentially stacked on a transparent substrate. The phase-shift layer and the light-shielding layer are sequentially removed from the substrate, to form a light-shielding pattern including a first opening and a phase-shift pattern including a second opening that is connected to the first opening and partially exposes the transparent substrate. Then, a transmitting portion is formed through the light-shielding pattern by partially removing the light-shielding pattern. The transmitting portion includes at least one portion of the phase-shift pattern on which a transmittance controller is formed. In one embodiment, the transmittance controller comprises a metal having a high absorption coefficient, and is formed through sputtering and diffusion processes. Accordingly, the intensity deviation between 0and 1order beams may be decreased, to thereby improve the processing margin of the exposure process.

Phase-shift mask and method of forming the same

An embodiment of a method of fabricating a chrome-less phase shift mask includes forming a hard mask film on a surface of a mask body having a trench circuit area and a mesa circuit area. The hard mask film is patterned. The mask body is anisotropically etched using the hard mask pattern as an etching mask to form pre-pitting patterns in the trench circuit area. The hard mask film having the hard mask pattern is again patterned to form a mesa hard mask pattern on the mesa circuit area and to expose a top surface of the trench circuit area. The mask body is anisotropically etched to form phase shift hillock patterns in the mesa circuit area and phase shift pitting patterns in the trench circuit area. Phase shift pitting patterns and phase shift hillock patterns may be formed on a single body.

Growing community of inventors

Hwaseong-si, South Korea

Gi-Sung Yoon