Hynix Semiconductor Inc.

Gi-Hyun Bae

Jin-Hong Ahn

Sang-Hoon Hong

Sang-Don Lee

Yil-Wook Kim

Young-June Park

A unit cell included in a non-volatile dynamic random access memory (NVDRAM) includes a control gate layer coupled to a word line; a capacitor for storing data; a floating transistor for transmitting stored data in the capacitor to a bit line, gate of the floating transistor being a single layer and serving as a temporary data storage; and a first insulating layer between the control gate layer and the gate of the floating transistor, wherein a voltage supplied to body of the floating transistor is controllable.

Apparatus and method of driving non-volatile DRAM

A method for operating a non-volatile dynamic random access memory (NVDRAM) device having a plurality of memory cells, each cell having a capacitor and a transistor having a floating gate includes the steps of (A) preparing a power-on mode for performing a DRAM operation; and (B) preparing a power-off mode for holding stored data in the memory cell.

Growing community of inventors

Ichon-shi, South Korea

Gi-Hyun Bae