Youngchang Chemical Co., Ltd.

Gi Hong Kim

Seung Hun Lee

Su Jin Lee

Seung Hyun Lee

Proposed is a process liquid composition for improving a lifting defect level of a photoresist pattern containing a surfactant and for reducing the number of defects of the photoresist pattern, the composition containing a surfactant and having a surface tension of 40 mN/m or less and a contact angle of 60° or smaller in the photoresist pattern having hydrophobicity represented by a contact angle of 70° or greater of water with respect to a photoresist surface in a photoresist pattern process.

Process liquid composition for lithography and pattern forming method using same

Proposed is a composition for a thick hard mask suitable for use in a semiconductor lithography process, and particularly a spin-on carbon hard mask composition and a patterning method of forming a hard mask layer by applying the composition on an etching target layer through spin coating and baking the composition. The composition has high solubility characteristics, thereby enabling the formation of a thick hard mask which can exhibit high etching resistance to tolerate multiple etching processes and excellent mechanical properties.

Highly thick spin-on-carbon hard mask composition and patterning method using same

The present disclosure relates to a method of forming an etching pattern in a semiconductor manufacturing process. Unlike a conventional method of forming a four-layer structure composed of a photoresist film, an anti-reflective film, a SiON film, and an organic hard mask film on a wafer, as preparation for an etching process, the method according to the present disclosure is an innovative etching pattern forming method capable of implementing the same etching pattern as is formed by the conventional method, using a double-layer structure composed of a photoresist film and a multifunctional organic-inorganic mask film.

Etching pattern forming method in semiconductor manufacturing process

Disclosed is a method of forming a fine silicon pattern with a high aspect ratio for fabrication of a semiconductor device. The method includes a cleaning process of removing organic residue or reside originating in fumes using a cleaning solution, thereby enabling formation of a desired pattern while preventing the pattern from being lifted. Thus, the present disclosure enables formation of a fine pattern by using a novel cleaning method.

Method for forming silicon or silicon compound pattern in semiconductor manufacturing process

Proposed are a processing solution for reducing the incidence of pattern collapse and the number of defects in a photoresist pattern including polyhydroxystyrene using extreme ultraviolet rays as an exposure source, and a method of forming a pattern using the same. The processing solution for reducing the incidence of photoresist pattern collapse and the number of defects includes 0.0001 to 1 wt % of an alkaline material, 0.0001 to 1 wt % of an anionic surfactant, and 98 to 99.9998 wt % of water.

Process liquid for extreme ultraviolet lithography and pattern forming method using same

A process of realizing a silicon micropattern having a large aspect ratio in a semiconductor-manufacturing process, and a novel wet etching method that includes treating an organic carbon film layer so that a hydrofluoric-acid-resistant material is selectively attached to the organic carbon film layer and then wet etching the same using an aqueous solution containing hydrofluoric acid, thus forming a pattern, are proposed. In the method of forming the pattern by wet etching, etching is performed so that an active region having a depth of several &#x3bc;m in an object to be etched is not damaged when a pattern having a small CD is formed, thereby exhibiting an effect of providing a method of forming a micropattern.

Etching method for forming micro silicon pattern in semiconductor manufacturing process

Provided is a composition for shrinking a photoresist pattern, which is capable of shrinking a photoresist pattern using a photoresist during the fabrication of a semiconductor, and to a method of shrinking a pattern using the composition, whereby a pattern to be formed can be shrunken in a photoresist-patterning process, thus remarkably decreasing the number of steps of a semiconductor fabrication process and reducing the fabrication time and costs.

Photoresist pattern shrinking composition and pattern shrinking method

A photoresist developer composition for an EUV (extreme ultraviolet) light source in a semiconductor-manufacturing process is proposed. Further, the photoresist developer composition for an EUV light source for forming a micropattern and a lithography process of forming a pattern on a semiconductor substrate using an EUV light source using the composition are proposed. The composition includes an aqueous solution containing 2 to 10 wt % of tetraethylammonium hydroxide (TEAH). When a photoresist is developed, an Eop is reduced, which shortens a process time, prevents a pattern from collapsing, and enables a pattern to have a uniform profile.

Developer composition, for EUV light source, for forming photosensitive photoresist micropattern

The present invention relates to a method of reducing the LWR (Line Width Roughness) of a photoresist pattern using a negative tone photoresist during the fabrication of a semiconductor, and more specifically to a composition capable of reducing LWR in order to ensure a higher pattern CDU after a negative tone development process, and a processing method using the composition, thus reducing the LWR, thereby providing better CDU than existing methods.

Method and composition for improving LWR in patterning step using negative tone photoresist

An extreme ultraviolet (EUV) developer composition for use in manufacturing a semiconductor is provided. More particularly an EUV developer composition for forming a fine pattern is provided, which is capable of forming a more uniform pattern and lowering EOP in a development process, the EUV developer composition including a water-soluble polymer represented by Chemical Formula 1, a nonionic surfactant represented by Chemical Formula 2, and an alkali compound.

EUV developer composition for forming photosensitive photoresist micropattern

Provided is a hard mask composition having high etching resistance suitable for use in a semiconductor lithography process, and particularly to a spin-on hard mask composition including a dibenzo carbazole polymer and to a patterning method of forming a hard mask layer by applying the composition on an etching layer through spin coating and performing a baking process. The hard mask according to the present invention has effects of exhibiting high solubility and superior mechanical properties, as well as high etching resistance to withstand multiple etching processes.

High etch resistance spin-on carbon hard mask composition and patterning method using same

Disclosed herein is a coating composition for preventing the collapse of a capacitor, comprising a silane compound or a phosphorus compound. The coating composition can adjust a contact angle with regard to water on a substrate, thereby preventing the collapse of capacitor patterns on the substrate.

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Daegu, South Korea

Gi Hong Kim