Jusung Engineering Co., Ltd.

Teratech Co., Ltd.

Gi-Chung Kwon

Yong-kwan Lee

Joung-Sik Kim

Hong-Sik Byun

Jae-Hyun Kim

Sae-Hoon Uhm

Sang-Won Lee

Hong-Seub Kim

Bu-Jin Ko

Sung-Weon Lee

Sun-Seok Han

Bo-Han Hong

Jin Kuk Hong

Hong-Young Chang

Jin Young Hong

Nae-Eung Lee

Young-Suk Lee

Chang-Ki Park

Chun-Hee Lee

Duck-Ho Kim

The present invention relates to an apparatus for decomposing perfluorocarbons and harmful gas using a high-density confined plasma source that includes: a reactor having inlet and outlet ports formed in the top and bottom sides thereof for receiving and discharging perfluorocarbons and harmful gas, a chamber having an internal passage, a ferrite core formed outside of the chamber and connected to an antenna, and a permanent magnet arranged around the ferrite core; a gas supply portion for supplying a gas for decomposing the perfluorocarbons and harmful gas into the reactor; and a generator and a controller for supplying electric power for the antenna of the reactor.

Apparatus for decomposing perfluorocarbon and harmful gas using high-density confined plasma source

An apparatus for etching a substrate includes: a chamber; a susceptor in the chamber, the susceptor including at least one loading portion corresponding to at least one substrate; a gas supply over the susceptor, the gas supply including a hollow and at least one through hole corresponding to the at least one loading portions; and at least one shielding means interposed into the at least one through holes, the at least one shielding means including a body part and a hanging part on the body part, the body part having a cross-sectional area smaller than the at least one through holes, and the hanging part outwardly protruding from the body part, wherein the at least one shielding means is suspended on the gas supply by the hanging part, and wherein the body part shields a central portion of the at least one substrate and exposes an edge portion of the at least one substrate.

Apparatus for etching substrate and method of etching substrate using the same

A plasma generation apparatus includes: a chamber having a chamber lid and defining an airtight reaction region; a susceptor in the chamber; a gas supply means supplying a process gas to the chamber; and a toroidal core vertically disposed with respect to the susceptor through the chamber lid, comprising: a toroidal ferromagnetic core combined with the chamber, the toroidal ferromagnetic core having a first portion outside the chamber and a second portion inside the chamber, the second portion having an opening portion; a radio frequency (RF) power supply connected to the chamber; an induction coil electrically connected to the RF power supply, the induction coil rolling the first portion; and a matching circuit matching an impedance between the RF power supply and the induction coil.

Plasma generation apparatus

The present invention relates to a method of forming an etching mask. According to the present invention, there is provided a method of forming an etching mask, comprising the steps of: depositing a hard mask film containing silicon on a substrate; depositing a photoresist on the hard mask film; patterning the photoresist; and etching the hard mask film using the photoresist pattern as an mask and using an etching gas including a CHF(x, y=1, 2, 3) gas. At this time, an etch selectivity of the hard mask film to the photoresist pattern can be increased using a mixed gas including CHFand Hgases when etching the hard mask film under the photoresist pattern used in a wavelength of 193 nm or less.

Method of forming etching mask

A hybrid coupled plasma type apparatus includes: a chamber having a gas-injecting unit; an electrostatic chuck in the chamber; an insulating plate over the gas-injecting unit; a high frequency generator; an impedance matching circuit connected to the high frequency generator; first and second antennas connected to the impedance matching circuit in parallel, a power of the high frequency generator being supplied to the first and second antennas; an electrode of a plate shape connected to one of the first and second antennas in serial, the power of the high frequency generator being supplied to the electrode; and a power distributor between the high frequency generator and one of the first and second antennas.

Apparatus using hybrid coupled plasma

A plasma generation apparatus includes: a chamber having a chamber lid and defining an airtight reaction region; a susceptor in the chamber; a gas supplier supplying a process gas to the chamber; and a toroidal core vertically disposed with respect to the susceptor through the chamber lid, including: a toroidal ferromagnetic core combined with the chamber, the toroidal ferromagnetic core having a first portion outside the chamber and a second portion inside the chamber, the second portion having an opening portion; a radio frequency (RF) power supply connected to the chamber; an induction coil electrically connected to the RF power supply, the induction coil rolling the first portion; and a matching circuit matching an impedance between the RF power supply and the induction coil.

An electrostatic chuck includes: a metal plate; a dielectric layer on the metal plate, the dielectric layer and the metal plate having a lift pin hole and an injection hole of a cooling gas; a lift pin moving up-and-down through the lift pin hole; first protection insulator on an inner surface of the lift pin hole; and second protection insulator on an inner surface of the injection hole.

Electrostatic chuck for preventing an arc

An impedance matching circuit for a plasma source includes: a first network including: a first coil; and a RF power supply applying a first voltage to the first coil; and a second network including; a second coil grounded having a second voltage, the second voltage being lower than the first voltage; first and second reactive elements, one end portion of the first and second reactive elements being connected to each end portion of the second coil, respectively; and a load connected to the other end portions of the first and second reactive elements, phases at two end portions of the load being different from each other.

Impedance matching circuit for inductively coupled plasma source

A plasma process chamber is monitored for excess current while fabricating a semiconductor device. The method includes grounding the plasma process chamber in which fabricating a semiconductor device is conducted using a plasma; detecting a current flowing in a ground line from the plasma process chamber to the ground; interpreting whether the detected current is more than a reference value during fabricating the semiconductor device; and deciding that the plasma process chamber is in an abnormal state when the detected current is more than the reference value. It is thereby possible to produce more stable plasma and the operation of the plasma process chamber is stabilized. Further, the expected life span of the plasma process chamber and other devices is enlarged, and the risk of injuring the operator is prevented.

Growing community of inventors

Gyeonggi-do, South Korea

Gi-Chung Kwon