Samsung Electronics Co., Ltd.

Geunkyu Choi

Sukjin Chung

JongCheol Lee

Jaechul Shin

MinHwa Jung

Sunyoung Lee

Younsoo Kim

Sungho Kang

Heeyeon Kim

Han Ki Lee

Seung Han Lee

Homin Son

In-Sun Yi

Jin Pil Heo

Jungil Ahn

Chayoung Yoo

Jaehee Lee

Byunghwan Kong

A substrate processing method includes: disposing a wafer in a wafer region of a tube; injecting an inert gas into a gap region, of the tube, between an inner side wall of the tube and the wafer disposed in the wafer region; and injecting a process gas into the wafer region of the tube, wherein a pressure of the gap region of the tube is higher than a pressure at an edge of the wafer region of the tube during the injection of the inert gas and the process gas.

Substrate processing apparatus including filling gas supply line and substrate processing method using the same

A substrate processing system may include a process chamber in which a process on a substrate is performed, a supporting unit in the process chamber to support the substrate, a gas supply unit including a gas supply part with gas supply holes, with the gas supply holes being configured to supply a process gas onto the substrate, and an exhaust unit configured to exhaust the process gas from the process chamber. The gas supply part may include a gas supply region provided with the gas supply holes and a gas diffusion region between the gas supply region and the exhaust unit. The gas diffusion region may be free of the gas supply holes.

Gas supply unit and substrate processing system

A semiconductor device manufacturing apparatus includes a shower head at a top of a chamber, a gas supplying part on the shower head, a susceptor in the chamber, and a gas exhausting part under the chamber. The chamber has first and second reaction spaces that are virtually separated from each other. A first gas supply pipe supplies a first gas into the first reaction space and a second gas supply pipe supplies a second gas into the second reaction space. A first gas exhausting pipe is adjacent the first reaction space and a second gas exhausting pipe is adjacent the second reaction space on opposite sides of the susceptor. A first gas sensor connected to the first gas exhausting pipe senses the second gas and a second gas sensor connected to the second gas exhausting pipe senses the first gas.

Semiconductor device manufacturing apparatus having plurality of gas exhausting pipes and gas sensors

A substrate treating method may be performed by a plasma treating apparatus. The substrate treating method may include: providing a substrate on a platform in a lower portion of an inner space of a process chamber; directing a first process gas upward from a first nozzle formed at an inner wall of the process chamber into an upper portion of the inner space, the first process gas being an inert gas and wherein the first nozzle is an obliquely upward-oriented nozzle structured to direct the first process gas upward; directing a second process gas downward from a second nozzle formed at a inner wall of the process chamber into a lower portion of the inner space, the second process gas being hydrogen gas and wherein the second nozzle is an obliquely downward-oriented nozzle structured to direct the second process gas downward; and applying a microwave to the upper portion of the inner space to excite the first process gas and the second process gas into plasma, and then processing the substrate.

Plasma treating apparatus, substrate treating method, and method of manufacturing a semiconductor device

According to example embodiments, a method of forming a layer includes: forming a dielectric layer using a metal precursor expressed by one of RM(NRR)and M(ORR) and using a silicon precursor expressed by HSi(NRR). Each of 'R', 'R', &#x201c;R&#x201d;, &#x201c;R&#x201d;, and &#x201c;R&#x201d; are hydrogen or hydrocarbon; &#x201c;R&#x201d; is different than &#x201c;R&#x201d; and &#x201c;R&#x201d;; &#x201c;x&#x201d; is in the range of 3 to 5; &#x201c;y&#x201d; is in the range of 1 to 4; &#x201c;z&#x201d; is in the range of 2 to 3; and &#x201c;M&#x201d; is a metal. The dielectric layer is a metal silicate layer or a metal nitride layer doped with silicon.

Methods of forming a layer

Growing community of inventors

Hwaseong-si, South Korea

Geunkyu Choi