Sungkyunkwan University

Plasmion Displays, Llc.

Geun Young Yeom

Ki Hyun Kim

You Jin Ji

Ki Seok Kim

Doo San Kim

Ji Young Byun

Jin Woo Park

Kyung Chae Yang

Da In Sung

Won Oh Lee

Ji Soo Oh

Hyun Woo Tak

Jong Sik Oh

Steven W Kim

Young-Joon Lee

Ye Ji Shin

Chang Hoon Song

Mu Kyeom Mun

JiEun Kang

Kyung Seok Min

Yun Jong Jang

Ye Eun Kim

You Jung Gill

Woong Sun Lim

Hee Ju Kim

Yi Yeon Kim

A dry etching method includes a first step of adsorbing first radicals into a surface of an etching target, wherein the first radicals are contained in first plasma generated from a plasma generator; and a second step of irradiating ion-beams extracted from second plasma generated from the plasma generator onto the surface of the etching target into which the radicals have been adsorbed, thereby desorbing a surface atomic layer of the etching target, wherein the first step is performed such that: a positive potential greater than a potential of the first plasma is applied to one or two selected from first to third grids, while a ground potential is applied to the rest thereof; and a negative potential equal to or lower than a potential of the third grid is applied to a substrate support structure.

Dry etching method using potential control of grid and substrate

A photoelectronic device includes a substrate; a first electrode and a second electrode disposed on the substrate and spaced apart from each other in a first direction; and a transition metal dichalcogenide thin film including at least one first region and at least one second region. Each first region includes M+N transition metal dichalcogenide molecular layers and extends along the first direction. Each second region includes N transition metal dichalcogenide molecular layers extending from lower N transition metal dichalcogenide molecular layers of the first region. Each second region extends along the first direction and is adjacent to each first region. Both end regions in the first direction among the first and the second regions are electrically connected to the first electrode and the second electrode, respectively.

Photoelectronic device, photodiode, and phototransistor

A plasma source device includes a pair of divided electrodes including a first divided electrode and a second divided electrode spaced apart from each other and electrically coupled to each other; and a ferrite structure comprising a portion interposed the first divided electrode and the second divided electrode.

Plasma source and plasma generation apparatus using the same

An ion-beam etching apparatus includes: a plasma chamber configured to generate plasma from process gas in the plasma chamber; at least one plasma valve coupled to the plasma chamber; an ion-beam source in communication with the plasma chamber, wherein the ion-beam source is configured to extract ions from the plasma and generate ion-beams when a bias is applied to the ion-beam source; an etching chamber in communication with the ion-beam source, and configured to accommodate an object to be etched; at least one etching valve coupled to the etching chamber; and at least one exhausting pump connected to either one or both of the plasma chamber and the etching chamber by the plasma valve and the etching valve, respectively, wherein the at least one exhausting pump is configured to receive and exhaust radicals in either one or both of the plasma chamber and the etching chamber by the plasma valve and the etching valve, respectively.

Ion beam etching apparatus

The present disclosure relates to a semiconductor device and a photoelectronic device, both including a transition-metal dichalcogenide thin-film, and to a method for producing a transition-metal dichalcogenide thin-film. The transition-metal dichalcogenide thin-film includes: a first region including a stack of N+M transition-metal dichalcogenide molecular layers; and a second region including a stack of N transition-metal dichalcogenide molecular layers, wherein the second region is horizontally adjacent to the first region, wherein the N transition-metal dichalcogenide molecular layers of the second region respectively horizontally extend from the N transition-metal dichalcogenide molecular layers of the first region.

Semiconductor device, photoelectronic device, and method for manufacturing transition-metal dichalcogenide thin film

Disclosed is an inductively-coupled plasma-generating device including: a first power supply for supplying high frequency power; a second power supply for supplying low frequency power; a single coil-based plasma source including at least two antennas which comprise a first antenna having one end as a grounded end and the other end, wherein the first power supply is connected to the first antenna at a point thereof adjacent to the grounded end to receive the high frequency power; and a second antenna surrounded by the first antenna, wherein the second antenna has one end connected to the first antenna and the other end as a low frequency power receiving end connected to the second power supply; and a gas supply for supplying a gas, wherein the gas is excited into plasma by the single coil-based plasma source.

Apparatus for generating plasma and apparatus for treating substrate having the same

This present disclosure relates to an atomic layer etching method for graphene, including adsorbing reactive radicals onto a surface of the graphene and irradiating an energy source to the graphene on which the reactive radicals are adsorbed.

Method for etching atomic layer of graphene

A method for fabricating a PDP is disclosed. The method for fabricating a PDP including the steps of preparing first and second panels for connecting with each other, forming at least one electrode on the first panel, forming a dielectric layer of PbO on the first panel, sequentially forming Cr and Ni on the PbO layer as a mask material of the PbO layer, performing photolithography and lift-off processes on the Ni/Cr layers to form a mask pattern of Ni/Cr, and etching the PbO layer using the mask pattern of Ni/Cr to form at least one capillary tube within the PbO layer to expose the electrode.

Method of fabricating capillary discharge plasma display panel using lift-off process

Growing community of inventors

Seoul, South Korea

Geun Young Yeom