Samsung Electronics Co., Ltd.

Geun Woo Ko

Pun Jae Choi

Nam Goo Cha

Yong Min Kwon

Jun Ho Lee

Dong Ho Kim

Wan Tae Lim

Geon-Wook Yoo

Dong Kuk Lee

Jin Wook Chung

Min Wook Choi

Kyoung Jun Kim

Ki Hyung Lee

Ah Young Woo

A light emitting device package includes: a plurality of light emitting chips configured to emit respective wavelength lights, each chip comprising electrodes at a bottom of the chip to form a flip-chip structure; a plurality of wirings directly connected to the electrodes of the chips, respectively; a plurality of electrode pads disposed below the chips and directly connected to the wirings, respectively; and a molding member integrally formed in a single layer structure to cover upper surfaces and side surfaces of the chips, and including a translucent material having a predetermined transmittance, wherein the wirings are disposed below a lower surface of the molding member.

Light emitting device package

A semiconductor light-emitting device package includes: a light-emitting structure having a first surface, a second surface opposite to the first surface and side surfaces disposed between the first and the second surfaces, the light-emitting structure comprising a first light-emitting laminate and a second light-emitting laminate, each of the first and the second light emitting laminates including: a first conductivity-type semiconductor layer; an active layer, and a second conductivity-type semiconductor layer, an interconnector provided on the second surface of the light-emitting structure and configured to electrically connect the first and the second light-emitting laminates; a metal guide surrounding the side surfaces of the light-emitting structure; and an encapsulant surrounding the metal guide and the second and the side surfaces of the light-emitting structure and exposing the first surface of the light-emitting structure.

Semiconductor light-emitting device package

There is provided a semiconductor light emitting deviceincluding a substructureincluding at least one light emitting region Rincluding a plurality of three-dimensional (3-D) light emitting nanostructuresand at least one electrode region R, Rincluding a plurality of locations CPA,A,B,A,B wherein an arrangement of the plurality of three-dimensional (3-D) light emitting nanostructuresand the plurality of locations CPA,A,B,A,B are identical.

Semiconductor light emitting device, method for manufacturing semiconductor light emitting device, and method for manufacturing semiconductor light emitting device package

A method of manufacturing a nanostructure semiconductor light emitting device may includes preparing a mask layer by sequentially forming a first insulating layer and a second insulating layer on a base layer configured of a first conductivity-type semiconductor, forming a plurality of openings penetrating the mask layer, growing a plurality of nanorods in the plurality of openings, removing the second insulating layer, preparing a plurality of nanocores by re-growing the plurality of nanorods, and forming nanoscale light emitting structures by sequentially growing an active layer and a second conductivity-type semiconductor layer on surfaces of the plurality of nanocores. The plurality of openings may respectively include a mold region located in the second insulating layer, and the mold region includes at least one curved portion of which an inclination of a side surface varies according to proximity to the first insulating layer.

Method of manufacturing nanostructure semiconductor light emitting device

Growing community of inventors

Suwon-si, South Korea

Geun Woo Ko