Samsung Electronics Co., Ltd.

Geun-woo Ko

Pun-jae Choi

Yong-Min Kwon

Jun-ho Lee

Jong-Hyun Lee

Cheol-soo Sone

Jong-hyun Lee

Sung-hyun Sim

Seung-woo Lee

Sung Su Kim

Hyung-kun Kim

Jung-sub Kim

Jin-sub Lee

Jin-hyun Lee

Si-han Kim

Hun-jae Chung

Han-Kyu Seong

Dong-kuk Lee

Sung-Won Hwang

Sung-won Hwang

Hyung-duk Ko

Suk-ho Choi

A semiconductor light-emitting device includes a plurality of light-emitting device structures separated from each other and arranged in a matrix form. A pad region at least partially surrounds the plurality of light-emitting device structures. The pad region is disposed outside of the plurality of light-emitting device structures. A partition structure is disposed on a first surface of the plurality of light-emitting device structures and is further disposed between adjacent light-emitting device structures of the plurality of light-emitting device structures. The partition structure defines a plurality of pixel spaces within the plurality of light-emitting device structures. A fluorescent layer is disposed on the first surface of the plurality of light-emitting device structures and fills each of the plurality of pixel spaces.

Pixel-type semiconductor light-emitting device and method of manufacturing the same

A light-emitting device includes an emission array including a plurality of light-emitting elements and a partition wall. The emission array includes a first region and a second region adjacent to each other. The partition wall is configured to isolate the first region and the second region from each other, such that the partition wall at least partially defines the first region in the emission array. The first region is associated with a first emission factor and the second region is associated with a second emission factor, the second emission factor different from the first emission factor.

Light-emitting devices, headlamps for vehicles, and vehicles including the same

A light source module including: a printed circuit board; a light emitting device mounted on the printed circuit board and including a plurality of subarrays each of the plurality of subarrays including a plurality of light emitting cells; and a plurality of driving chips mounted on the printed circuit board, wherein each of the plurality of driving chips respectively drives a corresponding one of the plurality of subarrays, wherein the plurality of subarrays are electrically isolated from each other.

Light emitting device and a light source module including the same

A light-emitting diode (LED) package includes a light-emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer; an isolating insulation layer; a first connection electrode portion and a second connection electrode portion electrically connected to the first conductive-type semiconductor layer and the second conductive-type semiconductor layer, respectively; a first electrode pad and a second electrode pad electrically connected to the first connection electrode portion and the second connection electrode portion, respectively; a first molding resin layer provided between the first electrode pad and the second electrode pad; a first pillar electrode and a second pillar electrode electrically connected to the first electrode pad and the second electrode pad, respectively; and a second molding resin layer provided on the first molding resin layer, the first electrode pad, and the second electrode pad, and between the first pillar electrode and the second pillar electrode.

Light-emitting diode (LED) package

A graphene light-emitting device and a method of manufacturing the same are provided. The graphene light-emitting device includes a p-type graphene doped with a p-type dopant; an n-type graphene doped with an n-type dopant; and an active graphene that is disposed between the type graphene and the n-type graphene and emits light, wherein the p-type graphene, the n-type graphene, and the active graphene are horizontally disposed.

Graphene light-emitting device and method of manufacturing the same

A semiconductor light-emitting device includes a contact layer. The contact layer has the composition ratio of Al elements which varies gradually therein. A region formed by an Al element in the contact layer of the semiconductor light-emitting device may improve light extraction efficiency of the light emitted from an active layer and facilitate a formation of the reflective electrode.

Semiconductor light-emitting devices including contact layers to form reflective electrodes

Growing community of inventors

Yongin-si, South Korea

Geun-woo Ko