Hynix Semiconductor Inc.

Hyundai Electronics Industries Co. Ltd.

Skhynix Inc.

Dongjin Semichem Co., Ltd.

Egtm Co., Ltd.

Other

Youngchang Chemical Co., Ltd.

Hyundai Electronics Inc. Co., Ltd.

Geun Su Lee

Jae Chang Jung

Ki Ho Baik

Min Ho Jung

Ki Soo Shin

Cha Won Koh

Cheol Kyu Bok

Jin Soo Kim

Keun Kyu Kong

Hyeong Soo Kim

Chi Hyeong Roh

Sung Eun Hong

Sung Koo Lee

Sam Young Kim

Myoung Soo Kim

Seung Chan Moon

Ha Na Kim

Keun Do Ban

Jae Min Kim

Hyung Gi Kim

Ji Won Moon

Young Sun Hwang

Seung Hun Lee

Min Su Kim

Jung Woo Kim

Kwon Hong

Jae Hyun Kim

Jong Min Lee

Woong Il Choi

Dong Hyun Lee

Young Sun Lee

Ji Hye Han

Hyung Soon Park

Eun Ae Jung

Sung Jae Lee

Won Wook Lee

Ki-Soo Shin

Myung Soo Lee

Jae Hyun Kang

Woong Jin Choi

Sang Youl Yi

Deog Bae Kim

Chang Il Choi

Hyun Sik Noh

Kee Joon Oh

Jin Wook Jang

Ki Ho Balk

Hyung Hwan Kim

Jae Chang Chung

Se Jin Choi

Dong Hak Jang

Sang Hyang Lee

According to one embodiment of the present invention, a method for forming a thin film using a surface protection material comprises: a surface protection layer forming step of forming a surface protection layer on the surface of a substrate by supplying a surface protection material to the inside of a chamber in which the substrate is placed; a step of performing a primary purging of the inside of the chamber; a metal precursor supply step of supplying a metal precursor to the inside of the chamber; a step of performing a secondary purging of the inside of the chamber; and a thin film forming step of supplying a reactive material to the inside of the chamber so as to react with the metal precursor and form a thin film.

Method for forming thin film using surface protection material

Disclosed is a method of forming a thin film using a surface protection material, the method comprising supplying the surface protection material to the inside of a chamber on which a substrate is placed so that the surface protection material is adsorbed to the substrate, discharging the unadsorbed surface protection material from the inside of the chamber by purging the interior of the chamber, supplying a metal precursor to the inside of the chamber so that the metal precursor is adsorbed to the substrate, discharging the unadsorbed metal precursor from the inside of the chamber by purging the interior of the chamber, and supplying a reaction material to the inside of the chamber so that the reaction material reacts with the adsorbed metal precursor to form the thin film.

Method of forming a thin film using a surface protection material

A gap-fill polymer for filling fine pattern gaps, which has a low dielectric constant (low-k) and excellent gap filling properties, may consist of a compound formed by condensation polymerization of a first oligomer represented by the formula 1 and a second oligomer represented by the formula 2.

Gap-fill polymer for filling fine pattern gaps and method for fabricating semiconductor device using the same

A method for forming a silicon oxide film of a semiconductor device is disclosed. The method of forming the silicon oxide film of the semiconductor device includes performing surface processing using an amine-based compound, so that the uniformity and density of the silicon oxide film may be improved.

Method for forming silicon oxide film of semiconductor device

An etching composition for preventing from leaning a capacitor contains hydrofluoric acid (HF), ammonium fluoride (NHF), an alkyl ammonium fluoride (RNHF; where Ris a C-Clinear or branched alkyl radical), a surfactant, an alcohol compound, and water. The composition can effectively suppress the leaning phenomenon of capacitors during the formation of the capacitors, so that height of the storage node of the capacitor can be secured, capacitors with improved capacitance can be manufactured, and the process can be adapted to the production of both present and future devices.

Method of manufacturing a capacitor

Disclosed herein are photoresist cleaning solutions useful for cleaning a semiconductor substrate in the last step of a developing step when photoresist patterns are formed. Also disclosed herein are methods for forming photoresist patterns using the solutions. The cleaning solutions of the present invention include HO as a primary component, a surfactant as an additive, and optionally an alcohol compound. The cleaning solution of the present invention has lower surface tension than that of distilled water which has been used for conventional cleaning solutions, thereby improving resistance to pattern collapse and stabilizing the photoresist pattern formation.

Method for forming a photoresist pattern

A photoresist coating composition that includes a compound represented by Formula 1 and an aqueous solvent, and a method for forming a fine pattern by coating the composition on a photoresist pattern to effectively reduce a size of a photoresist contact hole and a space, which can be applied to all semiconductor processes.

Photoresist coating composition and method for forming fine pattern using the same

Cleaning solutions for removing photoresist resins and a method of forming patterns using the same are disclosed. The cleaning solution includes water (HO) as main component, one or more surfactants as additive selected from the group consisting of polyoxyalkylene compounds, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having carboxylic acid (&#x2014;COOH) group, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having sulfonic acid (&#x2014;SOH) group, polyethylene glycol compounds, compounds of Formula 3, compounds having a molecular weight ranging from 1000 to 10000 including repeating unit of Formula 4, polyether denatured silicon compounds and alcohol compounds. wherein R, R, R, R, R, A, l and n are defined in the specification.

Cleaning solution for removing photoresist

A photoresist cleaning solution and method for forming photoresist patterns using the same. More specifically, disclosed are a photoresist cleaning solution comprising HO and an ionic surfactant represented by Formula 1, and a method for forming a photoresist pattern using the same. By spraying the cleaning solution of the present invention over photoresist film before and/or after exposing step, pattern formation in an undesired region caused by ghost images can be removed. 

Disclosed herein is a cross-linking polymer that includes a silicon compound and a hydroxyl compound. Also disclosed herein is a composition that includes the cross-linking polymer and an organic solvent. The composition can be used as a part of hard mask film applied over an underlying layer during the manufacture of a semiconductor device. The hard mask film is useful in the formation of a uniform pattern on the device.

Hard mask composition and method for manufacturing semiconductor device

Photoresist patterns are formed using a photoresist composition, which includes water, a negative photoresist polymer having a salt-type repeating unit, and a photoacid generator, so that a developing process can be performed not by using conventional TMAH solution but by using water. Additionally, because the main solvent of the composition is water, the disclosed photoresist composition is environment-friendly, and has a low light absorbance at 193 nm and 248 nm, which is useful in a photolithography process using a light source in a far ultraviolet region when high-integrated fine circuits of semiconductor device are manufactured.

Water-soluble negative photoresist polymer and composition containing the same

A photoresist coating composition that includes a compound represented by Formula 1 and an aqueous solvent, and a method for forming a fine pattern by coating the composition on a photoresist pattern to effectively reduce a size of a photoresist contact hole and a space, which can be applied to all of the semiconductor processes.

Photoresist cleaning solutions are used to clean semiconductor substrates before or after an exposing step when photoresist patterns are formed. The cleaning solutions include HO and a nonionic surfactant compound represented by Formula 1. By spraying the disclosed cleaning solutions on a surface of the semiconductor substrate before or after exposing step to form a photoresist pattern, the desired pattern only is obtained and unnecessary patterns generated in undesired regions by ghost images are avoided as excess acid generated by the photoacid generator is neutralized and removed and damage to unexposed portions of the photoresist polymer is avoided. 

Method for pattern formation using photoresist cleaning solution

The present invention relates to photoresist polymers and photoresist compositions. The disclosed photoresist polymers and photoresist compositions containing the same have excellent transmittance, etching resistance, thermal resistance and adhesive property, low light absorbance and high affinity to a developing solution at a wavelength of 193 nm and 157 nm, thereby improving LER (line edge roughness).

Photoresist polymer and photoresist composition containing the same

The present invention provides a process for using an amine contamination-protecting top-coating composition. Preferably, the amine contamination-protecting top-coating composition of the present invention comprises an amine contamination-protecting compound. Useful amine contamination-protecting compounds include amine derivatives; amino acid derivatives; amide derivatives; urethane derivatives; urea derivatives; salts thereof; and mixtures thereof. The amine contamination-protecting top-coating composition of the present invention reduces or eliminates problems such as T-topping due to a post exposure delay effect and/or difficulties in forming a fine pattern below 100 nm due to acid diffusion associated with conventional lithography processes involving a photoresist polymer containing an alicyclic main chain using a light source, such as KrF (248 nm), ArF (193 nm), F(157 nm), E-beam, ion beam and extremely ultraviolet (EUV).

Process for forming a fine pattern using a top-coating composition for a photoresist and product formed by same

Growing community of inventors

Kyoungki-do, South Korea

Geun Su Lee