Samsung Electronics Co., Ltd.

Geun-sook Park

Soo-cheol Lee

Tae-Jung Lee

Ho-ik Hwang

Sang-bae Yi

An electrically erasable and programmable read-only memory (EEPROM) is provided. The EEPROM includes a semiconductor substrate including spaced apart first, second and third active regions, a common floating gate traversing over the first through third active regions, source/drain regions formed in the third active region on opposite sides of the floating gate, a first interconnect connected to the first active region, a second interconnect connected to the second active region, and a third interconnect connected to either one of the source/drain regions.

Growing community of inventors

Suwon-si, South Korea

Geun-sook Park