Samsung Electronics Co., Ltd.

Geun-Hee Cho

Kyu-Hyoun Kim

Byung-Hoon Jeong

Kyu-hyoun Kim

Dong-Hwi Kim

Duc Nguyen

A hybrid memory device is provided. The hybrid memory device includes a DRAM, a non-volatile memory and a control circuit. The control circuit selects one of output data of the DRAM and output data of the non-volatile memory according to a mode selecting signal and output the selected data. The control circuit outputs data requested to be output from the DRAM when the data requested to be output is in the DRAM, and may output the data requested to be output from the non-volatile memory when the data requested to be output is in the non-volatile memory. Accordingly, the hybrid memory device has a high speed in a read and write operation, and has low power consumption.

Hybrid memory device, system including the same, and method of reading and writing data in the hybrid memory device

A delay-locked loop includes a phase detector, a delay line, and a filter unit. The phase detector compares the phase of the external clock signal with that of the feedback clock signal and outputs a phase difference as an error control signal. The delay line includes delay cells having various unit time delays. The number of delay cells is adjusted in response to a shift signal. The delay line receives the external clock signal and outputs an output clock signal. The filter unit generates the shift signal in response to the error control signal. In the delay-locked loop, the front delay cells, which compensate for a delay of an external clock signal having a high frequency, have short unit time delays. The rear delay cells, which compensate for a delay of the external clock signal having a low frequency, have long unit time delays.

Time delay compensation circuit comprising delay cells having various unit time delays

Delay-locked loop integrated circuits include a duty cycle correction circuit. This duty cycle correction circuit generates at least one output clock signal having a substantially uniform duty cycle in response to at least one input clock signal having a non-uniform duty cycle. The duty cycle correction circuit is also responsive to a standby control signal that synchronizes timing of power-saving duty cycle update operations within the duty cycle correction circuit. These update operations reset the set point of the correction circuit.

Duty cycle correction circuits suitable for use in delay-locked loops and methods of correcting duty cycles of periodic signals

A delay locked loop (DLL) circuit having a duty cycle corrector (DCC) that has a broad range of duty cycle correction, consumes only a small amount of power, has few restrictions on operating frequency, and improves the characteristics of a memory device is described. The delay locked loop circuit includes an additional loop for duty cycle correction as well as loops for controlling a rising edge and a falling edge of output signals. Thus, the delay locked loop circuit can internally correct the duty cycle without the use of a phase blender.

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Hwaseong-si, South Korea

Geun-Hee Cho